AAAAAA

   
Results: 1-2 |
Results: 2
DAMAGE TO SI SUBSTRATES DURING SIO2 ETCHING - A COMPARISON OF REACTIVE ION ETCHING AND MAGNETRON-ENHANCED REACTIVE ION ETCHING
Authors: GU T DITIZIO RA FONASH SJ AWADELKARIM OO RUZYLLO J COLLINS RW LEARY HJ
Citation: T. Gu et al., DAMAGE TO SI SUBSTRATES DURING SIO2 ETCHING - A COMPARISON OF REACTIVE ION ETCHING AND MAGNETRON-ENHANCED REACTIVE ION ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 567-573
METAL-OXIDE SEMICONDUCTOR CHARACTERIZATION OF SILICON SURFACES THERMALLY OXIDIZED AFTER REACTIVE ION ETCHING AND MAGNETICALLY ENHANCED REACTIVE ION ETCHING
Authors: SETTLEMYER KT RUZYLLO J HWANG DK LEARY HJ
Citation: Kt. Settlemyer et al., METAL-OXIDE SEMICONDUCTOR CHARACTERIZATION OF SILICON SURFACES THERMALLY OXIDIZED AFTER REACTIVE ION ETCHING AND MAGNETICALLY ENHANCED REACTIVE ION ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 249-252
Risultati: 1-2 |