METAL-OXIDE SEMICONDUCTOR CHARACTERIZATION OF SILICON SURFACES THERMALLY OXIDIZED AFTER REACTIVE ION ETCHING AND MAGNETICALLY ENHANCED REACTIVE ION ETCHING

In this study the performance of reactive ion etching (RIE) and magnet ically enhanced reactive ion etching (MERIE) processes in pregate oxid ation etching of the field oxide are compared. The comparison is carri ed out through metal-oxide-semiconductor (MOS) characterization of oxi des and interfaces formed on etched silicon surfaces. The results reve aled differences in the outcome of RIE and MERIE processes with the la tter displaying overall superior characteristics. MERIE induced surfac e damage is shallower, and is mostly removed during oxide growth. RIE damage propagates deeper into the Si bulk and still influences the MOS devices even after the top Si layers are converted into the oxide. Th e results obtained emphasize the importance of adequate cleaning of si licon surfaces following RIE/MERIE processes.