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Results: 1-25 | 26-39
Results: 1-25/39
IN-SITU TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF THE FORMATION OF SELF-ASSEMBLED GE ISLANDS ON SI
Authors: ROSS FM TERSOFF J REUTER M LEGOUES FK TROMP RM
Citation: Fm. Ross et al., IN-SITU TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF THE FORMATION OF SELF-ASSEMBLED GE ISLANDS ON SI, Microscopy research and technique, 42(4), 1998, pp. 281-294
EFFECT OF THE SURFACE UPON MISFIT DISLOCATION VELOCITIES DURING THE GROWTH AND ANNEALING OF SIGE SI (001) HETEROSTRUCTURES/
Authors: STACH EA HULL R TROMP RM REUTER MC COPEL M LEGOUES FK BEAN JC
Citation: Ea. Stach et al., EFFECT OF THE SURFACE UPON MISFIT DISLOCATION VELOCITIES DURING THE GROWTH AND ANNEALING OF SIGE SI (001) HETEROSTRUCTURES/, Journal of applied physics, 83(4), 1998, pp. 1931-1937
DISLOCATION PATTERNS IN STRAINED LAYERS FROM SOURCES ON PARALLEL GLIDE PLANES
Authors: SCHWARZ KW LEGOUES FK
Citation: Kw. Schwarz et Fk. Legoues, DISLOCATION PATTERNS IN STRAINED LAYERS FROM SOURCES ON PARALLEL GLIDE PLANES, Physical review letters, 79(10), 1997, pp. 1877-1880
DEFECT STATES IN STRAIN-RELAXED SI0.7GE0.3 LAYERS GROWN AT LOW-TEMPERATURE
Authors: MOONEY PM TILLY L DEMIC CP CHU JO CARDONE F LEGOUES FK MEYERSON BS
Citation: Pm. Mooney et al., DEFECT STATES IN STRAIN-RELAXED SI0.7GE0.3 LAYERS GROWN AT LOW-TEMPERATURE, Journal of applied physics, 82(2), 1997, pp. 688-695
THE EFFECT OF STRAIN ON THE FORMATION OF DISLOCATIONS AT THE SIGE SI INTERFACE/
Authors: LEGOUES FK
Citation: Fk. Legoues, THE EFFECT OF STRAIN ON THE FORMATION OF DISLOCATIONS AT THE SIGE SI INTERFACE/, MRS bulletin, 21(4), 1996, pp. 38-44
IN-SITU TEM STUDY OF THE GROWTH OF GE ON SI(111)
Authors: LEGOUES FK HAMMAR M REUTER MC TROMP RM
Citation: Fk. Legoues et al., IN-SITU TEM STUDY OF THE GROWTH OF GE ON SI(111), Surface science, 349(3), 1996, pp. 249-266
IN-SITU ULTRAHIGH-VACUUM TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF HETEROEPITAXIAL GROWTH .1. SI(001) GE/
Authors: HAMMAR M LEGOUES FK TERSOFF J REUTER MC TROMP RM
Citation: M. Hammar et al., IN-SITU ULTRAHIGH-VACUUM TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF HETEROEPITAXIAL GROWTH .1. SI(001) GE/, Surface science, 349(2), 1996, pp. 129-144
UNIQUE X-RAY-DIFFRACTION PATTERN AT GRAZING-INCIDENCE FROM MISFIT DISLOCATIONS IN SIGE THIN-FILMS
Authors: JORDANSWEET JL MOONEY PM LUTZ MA FEENSTRA RM CHU JO LEGOUES FK
Citation: Jl. Jordansweet et al., UNIQUE X-RAY-DIFFRACTION PATTERN AT GRAZING-INCIDENCE FROM MISFIT DISLOCATIONS IN SIGE THIN-FILMS, Journal of applied physics, 80(1), 1996, pp. 89-96
ROUGHNESS ANALYSIS OF SI SIGE HETEROSTRUCTURES/
Authors: FEENSTRA RM LUTZ MA STERN F ISMAIL K MOONEY PM LEGOUES FK STANIS C CHU JO MEYERSON BS
Citation: Rm. Feenstra et al., ROUGHNESS ANALYSIS OF SI SIGE HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1608-1612
STRAIN RELAXATION IN ULTRATHIN EPITAXIAL-FILMS OF BETA-FESI2 ON UNSTRAINED AND STRAINED SI(100) SURFACES
Authors: PEALE DR HAIGHT R LEGOUES FK
Citation: Dr. Peale et al., STRAIN RELAXATION IN ULTRATHIN EPITAXIAL-FILMS OF BETA-FESI2 ON UNSTRAINED AND STRAINED SI(100) SURFACES, Thin solid films, 264(1), 1995, pp. 28-39
STRAIN RELIEF DURING GROWTH - CAF2 ON SI(111)
Authors: TROMP RM LEGOUES FK REUTER MC
Citation: Rm. Tromp et al., STRAIN RELIEF DURING GROWTH - CAF2 ON SI(111), Physical review letters, 74(14), 1995, pp. 2706-2709
INFLUENCE OF MISFIT DISLOCATIONS ON THE SURFACE-MORPHOLOGY OF SI1-XGEX FILMS (VOL 66, PG 724, 1995)
Authors: LUTZ MA FEENSTRA RM LEGOUES FK MOONEY PM CHU JO
Citation: Ma. Lutz et al., INFLUENCE OF MISFIT DISLOCATIONS ON THE SURFACE-MORPHOLOGY OF SI1-XGEX FILMS (VOL 66, PG 724, 1995), Applied physics letters, 67(5), 1995, pp. 724-724
NEAR-BAND-EDGE PHOTOLUMINESCENCE IN RELAXED SI1-XGEX LAYERS
Authors: TILLY LP MOONEY PM CHU JO LEGOUES FK
Citation: Lp. Tilly et al., NEAR-BAND-EDGE PHOTOLUMINESCENCE IN RELAXED SI1-XGEX LAYERS, Applied physics letters, 67(17), 1995, pp. 2488-2490
RELAXATION MECHANISM OF GE ISLANDS SI(001) AT LOW-TEMPERATURE
Authors: LEGOUES FK TERSOFF J REUTER MC HAMMAR M TROMP R
Citation: Fk. Legoues et al., RELAXATION MECHANISM OF GE ISLANDS SI(001) AT LOW-TEMPERATURE, Applied physics letters, 67(16), 1995, pp. 2317-2319
RELAXED SI0.7GE0.3 BUFFER LAYERS FOR HIGH-MOBILITY DEVICES
Authors: MOONEY PM JORDANSWEET JL ISMAIL K CHU JO FEENSTRA RM LEGOUES FK
Citation: Pm. Mooney et al., RELAXED SI0.7GE0.3 BUFFER LAYERS FOR HIGH-MOBILITY DEVICES, Applied physics letters, 67(16), 1995, pp. 2373-2375
INFLUENCE OF MISFIT DISLOCATIONS ON THE SURFACE-MORPHOLOGY OF SI1-XGEX FILMS
Authors: LUTZ MA FEENSTRA RM LEGOUES FK MOONEY PM CHU JO
Citation: Ma. Lutz et al., INFLUENCE OF MISFIT DISLOCATIONS ON THE SURFACE-MORPHOLOGY OF SI1-XGEX FILMS, Applied physics letters, 66(6), 1995, pp. 724-726
EVOLUTION OF STRAIN RELAXATION IN STEP-GRADED SIGE SI STRUCTURES/
Authors: MOONEY PM JORDANSWEET JL CHU JO LEGOUES FK
Citation: Pm. Mooney et al., EVOLUTION OF STRAIN RELAXATION IN STEP-GRADED SIGE SI STRUCTURES/, Applied physics letters, 66(26), 1995, pp. 3642-3644
THERMALLY-INDUCED PRECIPITATION OF SILICON-CARBIDE IN A SEMICONDUCTORMATRIX-APPLICATION TO NANOPARTICLE FABRICATION
Authors: POWELL AR LEGOUES FK IYER SS EK B
Citation: Ar. Powell et al., THERMALLY-INDUCED PRECIPITATION OF SILICON-CARBIDE IN A SEMICONDUCTORMATRIX-APPLICATION TO NANOPARTICLE FABRICATION, JPN J A P 1, 33(4B), 1994, pp. 2392-2394
UHVCVD GROWTH OF SI SIGE HETEROSTRUCTURES AND THEIR APPLICATIONS/
Authors: MEYERSOIN BS SMAIL KE HARAME DL LEGOUES FK STORK JMC
Citation: Bs. Meyersoin et al., UHVCVD GROWTH OF SI SIGE HETEROSTRUCTURES AND THEIR APPLICATIONS/, Semiconductor science and technology, 9(11), 1994, pp. 2005-2010
IDENTIFICATION OF A MOBILITY-LIMITING SCATTERING MECHANISM IN MODULATION-DOPED SI SIGE HETEROSTRUCTURES/
Authors: ISMAIL K LEGOUES FK SAENGER KL ARAFA M CHU JO MOONEY PM MEYERSON BS
Citation: K. Ismail et al., IDENTIFICATION OF A MOBILITY-LIMITING SCATTERING MECHANISM IN MODULATION-DOPED SI SIGE HETEROSTRUCTURES/, Physical review letters, 73(25), 1994, pp. 3447-3450
CYCLIC GROWTH OF STRAIN-RELAXED ISLANDS
Authors: LEGOUES FK REUTER MC TERSOFF J HAMMAR M TROMP RM
Citation: Fk. Legoues et al., CYCLIC GROWTH OF STRAIN-RELAXED ISLANDS, Physical review letters, 73(2), 1994, pp. 300-303
SELF-ALIGNED SOURCES FOR DISLOCATION NUCLEATION - THE KEY TO LOW THREADING DISLOCATION DENSITIES IN COMPOSITIONALLY GRADED THIN-FILMS GROWNAT LOW-TEMPERATURE
Authors: LEGOUES FK
Citation: Fk. Legoues, SELF-ALIGNED SOURCES FOR DISLOCATION NUCLEATION - THE KEY TO LOW THREADING DISLOCATION DENSITIES IN COMPOSITIONALLY GRADED THIN-FILMS GROWNAT LOW-TEMPERATURE, Physical review letters, 72(6), 1994, pp. 876-879
MEASUREMENT OF THE ACTIVATION BARRIER TO NUCLEATION OF DISLOCATIONS IN THIN-FILMS - REPLY
Authors: LEGOUES FK MOONEY PM TERSOFF J
Citation: Fk. Legoues et al., MEASUREMENT OF THE ACTIVATION BARRIER TO NUCLEATION OF DISLOCATIONS IN THIN-FILMS - REPLY, Physical review letters, 72(25), 1994, pp. 4056-4056
COMPETING RELAXATION MECHANISMS IN STRAINED LAYERS
Authors: TERSOFF J LEGOUES FK
Citation: J. Tersoff et Fk. Legoues, COMPETING RELAXATION MECHANISMS IN STRAINED LAYERS, Physical review letters, 72(22), 1994, pp. 3570-3573
NUCLEATION OF DISLOCATIONS IN SIGE LAYERS GROWN ON (001)SI
Authors: MOONEY PM LEGOUES FK TERSOFF J CHU JO
Citation: Pm. Mooney et al., NUCLEATION OF DISLOCATIONS IN SIGE LAYERS GROWN ON (001)SI, Journal of applied physics, 75(8), 1994, pp. 3968-3977
Risultati: 1-25 | 26-39