Authors: KACHURIN GA TYSCHENKO IE ZHURAVLEV KS PAZDNIKOV NA VOLODIN VA GUTAKOVSKII AK LEIER AF SKORUPA W YANKOV RA

Citation: Ga. Kachurin et al., PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH SI+ IONS AND ANNEALEDIN A PULSED REGIME, Semiconductors, 31(6), 1997, pp. 626-630

Authors: KACHURIN GA ZHURAVLEV KS PAZDNIKOV NA LEIER AF TYSCHENKO IE VOLODIN VA SKORUPA W YANKOV RA

Citation: Ga. Kachurin et al., ANNEALING EFFECTS IN LIGHT-EMITTING SI NANOSTRUCTURES FORMED IN SIO2 BY ION-IMPLANTATION AND TRANSIENT PREHEATING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 583-586

Authors: KACHURIN GA TYSCHENKO IE ZHURAVLEV KS PAZDNIKOV NA VOLODIN VA GUTAKOVSKY AK LEIER AF SKORUPA W YANKOV RA

Citation: Ga. Kachurin et al., VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION-IMPLANTATION AND PULSE ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(3), 1997, pp. 571-574