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Authors: LEIFELD O MULLER B GRUTZMACHER DA KERN K
Citation: O. Leifeld et al., A UHV STM FOR IN-SITU CHARACTERIZATION OF MBE CVD GROWTH ON 4-INCH WAFERS/, Applied physics A: Materials science & processing, 66, 1998, pp. 993-997

Authors: BUDA B WANG C WREDE W LEIFELD O AS DJ SCHIKORA D LISCHKA K
Citation: B. Buda et al., THE INFLUENCE OF THE EARLY-STAGE OF ZNSE GROWTH ON GAAS(001) ON THE DEFECT-RELATED LUMINESCENCE, Semiconductor science and technology, 13(8), 1998, pp. 921-926

Authors: BUDA B LEIFELD O VOLLMEKE S SCHMILGUS F AS DJ SCHIKORA D LISCHKA K
Citation: B. Buda et al., INITIAL ROUGHNESS AND RELAXATION BEHAVIOR OF MBE GROWN ZNSE GAAS/, Acta Physica Polonica. A, 90(5), 1996, pp. 997-1001
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