Authors:
CHURCHILL AC
ROBBINS DJ
WALLIS DJ
GRIFFIN N
PAUL DJ
PIDDUCK AJ
LEONG WY
WILLIAMS GM
Citation: Ac. Churchill et al., 2-DIMENSIONAL ELECTRON-GAS MOBILITY AS A FUNCTION OF VIRTUAL SUBSTRATE QUALITY IN STRAINED SI SIGE HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1634-1638
Citation: Hg. Ang et al., A NEW ROUTE TO METAL-HALOGEN BOND FORMATION IN METAL-CARBONYL CLUSTERS - CRYSTAL-STRUCTURE OF THE FLUORINATED CLUSTER (MU-H)OS-3(CO)(10)(ASPH3)F, Journal of fluorine chemistry, 88(1), 1998, pp. 5-8
Authors:
HOPE DAO
PICKERING C
CARLINE RT
LEONG WY
ROBBINS DJ
Citation: Dao. Hope et al., REAL-TIME CONTROL OF LAYER THICKNESS IN LPCVD SI SI.GE-88.(12) HBT STRUCTURES/, Thin solid films, 294(1-2), 1997, pp. 18-21
Authors:
NEJIM A
CRISTIANO F
HEMMENT PLF
HOPE DAO
GLASPER JL
PICKERING C
LEONG WY
ROBBINS DJ
Citation: A. Nejim et al., A STUDY OF BASE CONTACT FORMATION IN EPITAXIAL SI SI0.88GE0.12 HBT STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 305-310
Authors:
CARLINE RT
ROBBINS DJ
STANAWAY MB
LEONG WY
Citation: Rt. Carline et al., LONG-WAVELENGTH SIGE SI RESONANT-CAVITY INFRARED DETECTOR USING A BONDED SILICON-ON-OXIDE REFLECTOR/, Applied physics letters, 68(4), 1996, pp. 544-546
Authors:
ROBBINS DJ
STANAWAY MB
LEONG WY
GLASPER JL
PICKERING C
Citation: Dj. Robbins et al., SI1-XGEX SI QUANTUM-WELL INFRARED PHOTODETECTORS/, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 363-367
Authors:
SHAFI ZA
ASHBURN P
POST IRC
ROBBINS DJ
LEONG WY
GIBBINGS CJ
NIGRIN S
Citation: Za. Shafi et al., ANALYSIS AND MODELING OF THE BASE CURRENTS OF SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED IN HIGH AND LOW-OXYGEN CONTENT MATERIAL/, Journal of applied physics, 78(4), 1995, pp. 2823-2829
Authors:
NAYAR V
PICKERING C
PIDDUCK AJ
CARLINE RT
LEONG WY
ROBBINS DJ
Citation: V. Nayar et al., THE SURFACE-ROUGHNESS AND OPTICAL-PROPERTIES OF HIGH-QUALITY SI EPITAXIAL LAYERS, Thin solid films, 233(1-2), 1993, pp. 40-45
Authors:
PICKERING C
CARLINE RT
ROBBINS DJ
LEONG WY
GRAY DE
GREEF R
Citation: C. Pickering et al., IN-SITU DUAL-WAVELENGTH AND EX-SITU SPECTROSCOPIC ELLIPSOMETRY STUDIES OF STRAINED SIGE EPITAXIAL LAYERS AND MULTIQUANTUM-WELL STRUCTURES, Thin solid films, 233(1-2), 1993, pp. 126-130