Authors: MI J WARREN P LETOUMEAU P JUDELEWICZ M GAILHANOU M DUTOIT M DUBOIS C DUPUY JC

Citation: J. Mi et al., HIGH-QUALITY SI1-X-YGEXCY EPITAXIAL LAYERS GROWN ON (100) SI BY RAPIDTHERMAL CHEMICAL-VAPOR-DEPOSITION USING METHYLSILANE, Applied physics letters, 67(2), 1995, pp. 259-261