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Results:
1-7
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Results: 7
Authors:
KOUBAITI S
LEVADE C
COUDERC JJ
VANDERSCHAEVE G
Citation: S. Koubaiti et al., ON THE INFLUENCE OF INDIUM ADDITION ON THE MECHANICAL-PROPERTIES OF GALLIUM-ARSENIDE AT ROOM-TEMPERATURE, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1(2), 1998, pp. 141-146
Authors:
KOUBAITI S
COUDERC JJ
LEVADE C
VANDERSCHAEVE G
Citation: S. Koubaiti et al., PHOTOPLASTIC EFFECT AND VICKERS MICROHARDNESS IN III-V AND II-VI SEMICONDUCTOR COMPOUNDS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 234, 1997, pp. 865-868
Authors:
KOUBAITI S
COUDERC JJ
LEVADE C
VANDERSCHAEVE G
Citation: S. Koubaiti et al., PHOTOPLASTIC EFFECT AND VICKERS MICROHARDNESS IN ZNS SPHALERITE, Scripta materialia, 34(6), 1996, pp. 869-875
Authors:
KOUBAITI S
COUDERC JJ
LEVADE C
VANDERSCHAEVE G
Citation: S. Koubaiti et al., VICKERS INDENTATION ON THE (001) FACES OF ZNS SPHALERITE UNDER UV ILLUMINATION AND IN DARKNESS - CRACK PATTERNS AND ROSETTE MICROSTRUCTURE, Acta materialia, 44(8), 1996, pp. 3279-3291
Authors:
LEVADE C
FARESS A
VANDERSCHAEVE G
Citation: C. Levade et al., A TEM IN-SITU INVESTIGATION OF DISLOCATION MOBILITY IN THE II-VI SEMICONDUCTOR COMPOUND ZNS - A QUANTITATIVE STUDY OF THE CATHODOPLASTIC EFFECT, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69(5), 1994, pp. 855-870
Authors:
LOUCHET F
PELISSIER J
CAILLARD D
PEYRADE JP
LEVADE C
VANDERSCHAEVE G
Citation: F. Louchet et al., IN-SITU TEM STUDY OF DISLOCATION MOBILITY IN SEMICONDUCTING MATERIALS, Microscopy microanalysis microstructures, 4(2-3), 1993, pp. 199-210
Authors:
FARESS A
LEVADE C
VANDERSCHAEVE G
Citation: A. Faress et al., DYNAMICS OF DISLOCATIONS IN II-VI COMPOUNDS UNDER ELECTRONIC EXCITATION - A TEM IN-SITU STUDY, Physica status solidi. a, Applied research, 138(2), 1993, pp. 583-589
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