IN-SITU TEM STUDY OF DISLOCATION MOBILITY IN SEMICONDUCTING MATERIALS

Authors
LOUCHET F PELISSIER J CAILLARD D PEYRADE JP LEVADE C VANDERSCHAEVE G
Citation
F. Louchet et al., IN-SITU TEM STUDY OF DISLOCATION MOBILITY IN SEMICONDUCTING MATERIALS, Microscopy microanalysis microstructures, 4(2-3), 1993, pp. 199-210
Citations number
23
Categorie Soggetti
Spectroscopy,Microscopy
Journal title
Microscopy microanalysis microstructures → ACNP
ISSN journal
11542799
Volume
4
Issue
2-3
Year of publication
1993
Pages
199 - 210
Database
ISI
SICI code
1154-2799(1993)4:2-3<199:ITSODM>2.0.ZU;2-N
Abstract
In situ straining experiments have been conducted in Toulouse and Gren oble on elemental semiconductors, III-V and II-VI compounds. This arti cle gives a common interpretation of the results obtained, which allow s us to discuss the effect of the strength of covalent bonding on the mobility of dislocations under different conditions.