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Citation: Rf. Lever et al., BORON-DIFFUSION ACROSS SILICON-SILICON GERMANIUM BOUNDARIES, Journal of applied physics, 83(4), 1998, pp. 1988-1994

Authors: HASHIM MDR LEVER RF ASHBURN P PARKER GJ

Citation: Mdr. Hashim et al., EFFECT OF TRANSISTOR GEOMETRY ON THE ELECTRICAL CHARACTERISTICS OF SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS AT LOW-TEMPERATURES, Journal de physique. IV, 6(C3), 1996, pp. 119-124

Authors: LEVER RF GRIFFIN PB RAUSCH WA

Citation: Rf. Lever et al., OXIDATION ENHANCED DIFFUSION OF BORON IN SILICON AT 650-750-DEGREES-CUSING STEAM IN THE RANGE 1-15 ATMOSPHERES, Journal of applied physics, 78(5), 1995, pp. 3115-3120

Authors: GRIFFIN PB LEVER RF PACKAN PA PLUMMER JD

Citation: Pb. Griffin et al., DOPING AND DAMAGE DOSE DEPENDENCE OF IMPLANT INDUCED TRANSIENT ENHANCED DIFFUSION BELOW THE AMORPHIZATION THRESHOLD, Applied physics letters, 64(10), 1994, pp. 1242-1244