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Authors:
LINDOLF J
KLEHN B
KUNZE U
KIUNKE W
EISELE I
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Citation: P. Bauernschmitt et al., TRANSITION FROM MOS TO SCHOTTKY-CONTACT BEHAVIOR IN YB-SIO2-SI TUNNELING JUNCTIONS WITH EXTREMELY THIN SIO2 LAYER, Microelectronic engineering, 22(1-4), 1993, pp. 105-108