TRANSITION FROM MOS TO SCHOTTKY-CONTACT BEHAVIOR IN YB-SIO2-SI TUNNELING JUNCTIONS WITH EXTREMELY THIN SIO2 LAYER

Authors
BAUERNSCHMITT P LINDOLF J KUNZE U
Citation
P. Bauernschmitt et al., TRANSITION FROM MOS TO SCHOTTKY-CONTACT BEHAVIOR IN YB-SIO2-SI TUNNELING JUNCTIONS WITH EXTREMELY THIN SIO2 LAYER, Microelectronic engineering, 22(1-4), 1993, pp. 105-108
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
105 - 108
Database
ISI
SICI code
0167-9317(1993)22:1-4<105:TFMTSB>2.0.ZU;2-M
Abstract
The contact resistance R(c) of Yb-SiO2-Si tunneling junctions with a b arrier thickness ranging from 1.0 to 2.8 nm is studied as a function o f temperature. About 1.5 nm R(c) shows a distinct minimum, which indic ates the transition from MOS tunneling with an electron layer at the S i surface at thicker oxides to the onset of Schottky-barrier formation at extremely thin oxides.