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Results: 51-70/70
Authors:
LIOU JJ
ORTIZCONDE A
Citation: Jj. Liou et A. Ortizconde, THE EFFECTS OF SPACE-CHARGE-LAYER THICKNESS MODULATION ON DIFFUSION CAPACITANCE, JPN J A P 1, 33(11), 1994, pp. 6148-6149
Authors:
LIOU JJ
Citation: Jj. Liou, A MODEL-BASED COMPARISON OF THE PERFORMANCE OF ALGAAS GAAS AND SI/SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS (HBTS) INCLUDING THERMAL EFFECTS/, JPN J A P 2, 33(7B), 1994, pp. 120000990-120000992
Authors:
LIOU JJ
LIOU LL
HUANG CI
Citation: Jj. Liou et al., ANALYTICAL MODEL FOR THE ALGAAS GAAS MULTIEMITTER FINGER HBT INCLUDING SELF-HEATING AND THERMAL COUPLING EFFECTS/, IEE proceedings. Circuits, devices and systems, 141(6), 1994, pp. 469-475
Authors:
WONG WW
LIOU JJ
Citation: Ww. Wong et Jj. Liou, JFET CIRCUIT SIMULATION USING SPICE IMPLEMENTED WITH AN IMPROVED MODEL, IEEE transactions on computer-aided design of integrated circuits and systems, 13(1), 1994, pp. 105-109
Authors:
LIOU JJ
HUANG CI
Citation: Jj. Liou et Ci. Huang, BASE AND COLLECTOR CURRENTS OF PRE-BURN-IN AND POST-BURN-IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 37(7), 1994, pp. 1349-1352
Authors:
LIOU JJ
LIOU LL
HUANG CI
Citation: Jj. Liou et al., THE THERMAL-AVALANCHE INTERACTING BEHAVIOR OF ALGAAS GAAS HBTS/, Solid-state electronics, 37(12), 1994, pp. 1996-1998
Authors:
KAGER A
LIOU JJ
LIOU LL
HUANG C
Citation: A. Kager et al., A SEMINUMERICAL MODEL FOR MULTI-EMITTER FINGER ALGAAS GAAS HBTS/, Solid-state electronics, 37(11), 1994, pp. 1825-1832
Authors:
LIOU JJ
HO CS
KAGER A
Citation: Jj. Liou et al., DETERMINATION OF THE FITTING PARAMETERS FOR USING UNIFORM EMITTER ANDBASE DOPING PROFILE IN BIPOLAR-TRANSISTOR MODELING, Solid-state electronics, 37(1), 1994, pp. 183-186
Authors:
LIOU JJ
HUANG CI
Citation: Jj. Liou et Ci. Huang, ON THE SURFACE RECOMBINATION CURRENT OF HBTS - A DIFFERENT PERSPECTIVE, Physica status solidi. a, Applied research, 145(1), 1994, pp. 110000075-110000079
Authors:
LIOU JJ
HUANG CI
BAYRAKTAROGLU B
WILLIAMSON DC
PARAB KB
Citation: Jj. Liou et al., BASE AND COLLECTOR LEAKAGE CURRENTS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 76(5), 1994, pp. 3187-3193
Authors:
HO CS
LIOU JJ
GEORGIOPOULOS M
HEILEMAN GL
CHRISTODOULOU C
Citation: Cs. Ho et al., ANALOG CIRCUIT-DESIGN AND IMPLEMENTATION OF AN ADAPTIVE RESONANCE THEORY (ART) NEURAL-NETWORK ARCHITECTURE, International journal of electronics, 76(2), 1994, pp. 271-291
Authors:
ORTIZCONDE A
LIOU JJ
SANCHEZ MG
NUNEZ MG
ANDERSON RL
Citation: A. Ortizconde et al., SERIES RESISTANCE AND EFFECTIVE CHANNEL-LENGTH EXTRACTION OF N-CHANNEL MOSFET AT 77-K, Electronics Letters, 30(8), 1994, pp. 670-672
Authors:
ORTIZCONDE A
LIOU JJ
WONG W
SANCHEZ FJG
Citation: A. Ortizconde et al., SIMPLE METHOD FOR EXTRACTING THE DIFFERENCE BETWEEN THE DRAIN AND SOURCE SERIES RESISTANCES IN MOSFETS, Electronics Letters, 30(12), 1994, pp. 1013-1015
Authors:
LIOU JJ
KAGER A
Citation: Jj. Liou et A. Kager, THEORETICAL PREDICTION OF THE PERFORMANCE OF SI AND SIC BIPOLAR-TRANSISTORS OPERATING AT HIGH-TEMPERATURES, IEE proceedings. Part G. Circuits, devices and systems, 140(4), 1993, pp. 289-293
Authors:
LIOU JJ
Citation: Jj. Liou, PHYSICAL MODELS FOR PREDICTING THE PERFORMANCE OF SI SI, ALGAAS/GAAS,AND SI/SIGE SOLAR-CELLS/, Solar energy materials and solar cells, 29(3), 1993, pp. 261-276
Authors:
SHAKOURI H
LIOU JJ
Citation: H. Shakouri et Jj. Liou, NUMERICAL-SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SILICON PHOTOCONDUCTIVE CIRCUIT ELEMENTS, International journal of numerical modelling, 6(3), 1993, pp. 221-231
Authors:
LIOU JJ
HO CS
LIOU LL
HUANG CI
Citation: Jj. Liou et al., AN ANALYTICAL MODEL FOR CURRENT TRANSPORT IN ALGAAS GAAS ABRUPT HBTS WITH A SETBACK LAYER/, Solid-state electronics, 36(6), 1993, pp. 819-825
Authors:
LIOU JJ
Citation: Jj. Liou, OPTIMIZATION OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR CURRENT GAIN, CUTOFF FREQUENCY AND MAXIMUM FREQUENCY/, Solid-state electronics, 36(10), 1993, pp. 1481-1491
Authors:
LIOU JJ
Citation: Jj. Liou, AVALANCHE MULTIPLICATION IN FORWARD-ACTIVE AND REVERSE-ACTIVE MODE BIPOLAR JUNCTION TRANSISTORS, International journal of electronics, 75(6), 1993, pp. 1143-1151
Authors:
LIOU JJ
LIOU LL
HUANG CI
BAYRAKTAROGLU B
Citation: Jj. Liou et al., A PHYSICS-BASED, ANALYTICAL HETEROJUNCTION BIPOLAR-TRANSISTOR MODEL INCLUDING THERMAL AND HIGH-CURRENT EFFECTS, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1570-1577