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Results: 1-17 |
Results: 17
THE DARK SIDE OF DIOXYGEN BIOCHEMISTRY
Authors: VALENTINE JS WERTZ DL LYONS TJ LIOU LL GOTO JJ GRALLA EB
Citation: Js. Valentine et al., THE DARK SIDE OF DIOXYGEN BIOCHEMISTRY, CURRENT OPINION IN CHEMICAL BIOLOGY, 2(2), 1998, pp. 253-262
DESIGN METHODOLOGY OF MICROSTRIP LINES USING DIMENSIONAL ANALYSIS
Authors: MAH MY LIOU LL EWING RL FERENDECI AM
Citation: My. Mah et al., DESIGN METHODOLOGY OF MICROSTRIP LINES USING DIMENSIONAL ANALYSIS, IEEE microwave and guided wave letters, 8(7), 1998, pp. 248-250
AN EQUIVALENT-CIRCUIT APPROACH FOR MICROSTRIP COMPONENT ANALYSIS USING THE FDTD METHOD
Authors: LIOU LL COOK J
Citation: Ll. Liou et J. Cook, AN EQUIVALENT-CIRCUIT APPROACH FOR MICROSTRIP COMPONENT ANALYSIS USING THE FDTD METHOD, IEEE microwave and guided wave letters, 8(10), 1998, pp. 330-332
DC POWER LIMITATION OF THE HETEROJUNCTION BIPOLAR-TRANSISTOR WITH DOTGEOMETRY - EFFECT OF BASE POTENTIAL DISTRIBUTION ON THERMAL RUNAWAY
Authors: LIOU LL JENKINS T HUANG CI
Citation: Ll. Liou et al., DC POWER LIMITATION OF THE HETEROJUNCTION BIPOLAR-TRANSISTOR WITH DOTGEOMETRY - EFFECT OF BASE POTENTIAL DISTRIBUTION ON THERMAL RUNAWAY, Solid-state electronics, 41(6), 1997, pp. 871-877
THERMAL CHARACTERIZATION OF THERMALLY-SHUNTED HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: SEWELL J LIOU LL BARLAGE D BARRETTE J BOZADA C DETTMER R FITCH R JENKINS T LEE R MACK M TROMBLEY G WATSON P
Citation: J. Sewell et al., THERMAL CHARACTERIZATION OF THERMALLY-SHUNTED HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE electron device letters, 17(1), 1996, pp. 19-21
SMALL-SIGNAL MICROWAVE CHARACTERISTICS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING 1D NUMERICAL-SIMULATION INCLUDING THERMAL AND PARASITIC EFFECTS/
Authors: LIOU LL JENKINS T BARRETTE J BARLAGE D LEE R
Citation: Ll. Liou et al., SMALL-SIGNAL MICROWAVE CHARACTERISTICS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING 1D NUMERICAL-SIMULATION INCLUDING THERMAL AND PARASITIC EFFECTS/, Solid-state electronics, 39(7), 1996, pp. 1104-1108
THEORETICAL THERMAL RUNAWAY ANALYSIS OF HETEROJUNCTION BIPOLAR-TRANSISTORS - JUNCTION TEMPERATURE RISE THRESHOLD
Authors: LIOU LL BAYRAKTAROGLU B HUANG CI
Citation: Ll. Liou et al., THEORETICAL THERMAL RUNAWAY ANALYSIS OF HETEROJUNCTION BIPOLAR-TRANSISTORS - JUNCTION TEMPERATURE RISE THRESHOLD, Solid-state electronics, 39(1), 1996, pp. 165-172
BIAS, FREQUENCY, AND AREA DEPENDENCIES OF HIGH-FREQUENCY NOISE IN ALGAAS GAAS HBTS/
Authors: LIOU JJ JENKINS TJ LIOU LL NEIDHARD R BARLAGE DW FITCH R BARRETTE JP MACK M BOZADA CA LEE RHY DETTMER RW SEWELL JS
Citation: Jj. Liou et al., BIAS, FREQUENCY, AND AREA DEPENDENCIES OF HIGH-FREQUENCY NOISE IN ALGAAS GAAS HBTS/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 116-122
GENES THAT REGULATE EXPRESSION OF YEAST CU ZN SUPEROXIDE-DISMUTASE INRESPONSE TO OXIDATIVE STRESS
Authors: GRALLA EB MOY V LIOU LL ELLERBY L VALENTINE JS
Citation: Eb. Gralla et al., GENES THAT REGULATE EXPRESSION OF YEAST CU ZN SUPEROXIDE-DISMUTASE INRESPONSE TO OXIDATIVE STRESS, Journal of cellular biochemistry, 1995, pp. 259-259
THERMAL-AVALANCHE INTERACTING BEHAVIOR OF ALGAAS GAAS MULTI-EMITTER FINGER HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: LIOU JJ ORTIZCONDE A LIOU LL HUANG CI
Citation: Jj. Liou et al., THERMAL-AVALANCHE INTERACTING BEHAVIOR OF ALGAAS GAAS MULTI-EMITTER FINGER HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 38(9), 1995, pp. 1645-1648
COMBINED EFFECTS OF GRADED AND SETBACK LAYERS ON THE ALGAAS GAAS HBT CURRENT-VOLTAGE CHARACTERISTICS/
Authors: HO CS LIOU JJ CHEN DL LIOU LL HUANG CI
Citation: Cs. Ho et al., COMBINED EFFECTS OF GRADED AND SETBACK LAYERS ON THE ALGAAS GAAS HBT CURRENT-VOLTAGE CHARACTERISTICS/, Solid-state electronics, 38(3), 1995, pp. 627-632
ANALYTICAL MODEL FOR THE ALGAAS GAAS MULTIEMITTER FINGER HBT INCLUDING SELF-HEATING AND THERMAL COUPLING EFFECTS/
Authors: LIOU JJ LIOU LL HUANG CI
Citation: Jj. Liou et al., ANALYTICAL MODEL FOR THE ALGAAS GAAS MULTIEMITTER FINGER HBT INCLUDING SELF-HEATING AND THERMAL COUPLING EFFECTS/, IEE proceedings. Circuits, devices and systems, 141(6), 1994, pp. 469-475
THE THERMAL-AVALANCHE INTERACTING BEHAVIOR OF ALGAAS GAAS HBTS/
Authors: LIOU JJ LIOU LL HUANG CI
Citation: Jj. Liou et al., THE THERMAL-AVALANCHE INTERACTING BEHAVIOR OF ALGAAS GAAS HBTS/, Solid-state electronics, 37(12), 1994, pp. 1996-1998
A SEMINUMERICAL MODEL FOR MULTI-EMITTER FINGER ALGAAS GAAS HBTS/
Authors: KAGER A LIOU JJ LIOU LL HUANG C
Citation: A. Kager et al., A SEMINUMERICAL MODEL FOR MULTI-EMITTER FINGER ALGAAS GAAS HBTS/, Solid-state electronics, 37(11), 1994, pp. 1825-1832
THERMAL-STABILITY ANALYSIS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH MULTIPLE EMITTER FINGERS/
Authors: LIOU LL BAYRAKTAROGLU B
Citation: Ll. Liou et B. Bayraktaroglu, THERMAL-STABILITY ANALYSIS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH MULTIPLE EMITTER FINGERS/, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 629-636
AN ANALYTICAL MODEL FOR CURRENT TRANSPORT IN ALGAAS GAAS ABRUPT HBTS WITH A SETBACK LAYER/
Authors: LIOU JJ HO CS LIOU LL HUANG CI
Citation: Jj. Liou et al., AN ANALYTICAL MODEL FOR CURRENT TRANSPORT IN ALGAAS GAAS ABRUPT HBTS WITH A SETBACK LAYER/, Solid-state electronics, 36(6), 1993, pp. 819-825
A PHYSICS-BASED, ANALYTICAL HETEROJUNCTION BIPOLAR-TRANSISTOR MODEL INCLUDING THERMAL AND HIGH-CURRENT EFFECTS
Authors: LIOU JJ LIOU LL HUANG CI BAYRAKTAROGLU B
Citation: Jj. Liou et al., A PHYSICS-BASED, ANALYTICAL HETEROJUNCTION BIPOLAR-TRANSISTOR MODEL INCLUDING THERMAL AND HIGH-CURRENT EFFECTS, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1570-1577
Risultati: 1-17 |