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ISOLATION OF GAAS IS CREATED ON MOS-HYDRI DE EPITAXIAL STRUCTURES USING PROTON-BOMBARDMENT
Authors:
KOZLOVSKII VV KOZLOVSKAYA IA LIVSHITS YA MARAKHONOV VM
Citation:
Vv. Kozlovskii et al., ISOLATION OF GAAS IS CREATED ON MOS-HYDRI DE EPITAXIAL STRUCTURES USING PROTON-BOMBARDMENT, Pis'ma v Zurnal tehniceskoj fiziki, 20(2), 1994, pp. 5-8
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