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Results: 3
GEOMETRY AND QUANTUM DELOCALIZATION OF INTERSTITIAL OXYGEN IN SILICON
Authors: ARTACHO E LIZONNORDSTROM A YNDURAIN F
Citation: E. Artacho et al., GEOMETRY AND QUANTUM DELOCALIZATION OF INTERSTITIAL OXYGEN IN SILICON, Physical review. B, Condensed matter, 51(12), 1995, pp. 7862-7865
REAL-SPACE FIRST PRINCIPLES CALCULATION OF THE QUASI-PARTICLE SPECTRUM IN SEMICONDUCTORS - APPLICATION TO INTERSTITIAL O IN SI
Authors: LIZONNORDSTROM A YNDURAIN F
Citation: A. Lizonnordstrom et F. Yndurain, REAL-SPACE FIRST PRINCIPLES CALCULATION OF THE QUASI-PARTICLE SPECTRUM IN SEMICONDUCTORS - APPLICATION TO INTERSTITIAL O IN SI, Solid state communications, 94(5), 1995, pp. 335-340
GEOMETRICAL CONFIGURATION OF INTERSTITIAL OXYGEN IN SILICON AND IN GERMANIUM
Authors: LIZONNORDSTROM A YNDURAIN F
Citation: A. Lizonnordstrom et F. Yndurain, GEOMETRICAL CONFIGURATION OF INTERSTITIAL OXYGEN IN SILICON AND IN GERMANIUM, Solid state communications, 89(9), 1994, pp. 819-822
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