Authors: JONGSTE JF LI X LOKKER JP JANSSEN GCAM RADELAAR S

Citation: Jf. Jongste et al., HIGH-PRESSURE ALUMINUM FOR SUBMICRON VIAS USING A LIQUID TRANSDUCER, Microelectronic engineering, 37-8(1-4), 1997, pp. 319-327

Authors: JONGSTE JF LOKKER JP JANSSEN GCAM RADELAAR S TORRES J PALLEAU J

Citation: Jf. Jongste et al., MECHANICAL RELIABILITY OF CVD-COPPER THIN-FILMS, Microelectronic engineering, 33(1-4), 1997, pp. 39-46

Authors: LOKKER JP KALKMAN AJ SCHELLEVIS H JANSSEN GCAM RADELAAR S

Citation: Jp. Lokker et al., MECHANICAL-BEHAVIOR DURING THERMAL CYCLING OF ALVPD LINE PATTERNS, Microelectronic engineering, 33(1-4), 1997, pp. 129-135

Authors: LEUSINK GJ LOKKER JP VANDENHOMBERG MJC JONGSTE JF OOSTERLAKEN TGM JANSSEN GCAM RADELAAR S

Citation: Gj. Leusink et al., STRESS IN AL, ALSICU, AND ALVPD FILMS ON OXIDIZED SI SUBSTRATES, Applied surface science, 91(1-4), 1995, pp. 215-219

Authors: VANSWAAIJ RACMM WILLEMS WPM LOKKER JP BEZEMER J VANDERWEG WF

Citation: Racmm. Vanswaaij et al., ELECTROPHOTOGRAPHIC DISCHARGE OF CDS EXPLAINED BY A SURFACE-DEPLETIONDISCHARGE MODEL, Journal of applied physics, 77(4), 1995, pp. 1635-1639