MECHANICAL-BEHAVIOR DURING THERMAL CYCLING OF ALVPD LINE PATTERNS

Citation
Jp. Lokker et al., MECHANICAL-BEHAVIOR DURING THERMAL CYCLING OF ALVPD LINE PATTERNS, Microelectronic engineering, 33(1-4), 1997, pp. 129-135
Citations number
13
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
33
Issue
1-4
Year of publication
1997
Pages
129 - 135
Database
ISI
SICI code
0167-9317(1997)33:1-4<129:MDTCOA>2.0.ZU;2-N
Abstract
The mechanical behaviour of AlV(0.1 at%)Pd(0.1 at%) films during therm al cycling is studied. Apart from films line patterns have also been s tudied. Passivated and unpassivated line patterns covering the whole w afer were produced. The curvature in line length and line width direct ions of the various wafers is determined in situ, during thermal cycli ng between 50 degrees C and 400 degrees C. For unpassivated AlVPd line structures the curvature in the line width direction is smaller than in the line length direction. Furthermore, a linear dependence between curvature and temperature has been obtained. For wafers with passivat ed AlVPd lines the curvature in the line length and line width directi ons are of the same order of magnitude. Again the curvatures depend li nearly on the temperature in the whole temperature range between 50 de grees C and 400 degrees C.