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Results: 1-18 |
Results: 18
SIMPLE TECHNOLOGY FOR BULK ACCELEROMETER BASED ON BOND AND ETCH BACK SILICON-ON-INSULATOR WAFERS
Authors: PLAZA JA ESTEVE J LORATAMAYO E
Citation: Ja. Plaza et al., SIMPLE TECHNOLOGY FOR BULK ACCELEROMETER BASED ON BOND AND ETCH BACK SILICON-ON-INSULATOR WAFERS, Sensors and actuators. A, Physical, 68(1-3), 1998, pp. 299-302
EFFECT OF SILICON-OXIDE, SILICON-NITRIDE AND POLYSILICON LAYERS ON THE ELECTROSTATIC PRESSURE DURING ANODIC BONDING
Authors: PLAZA JA ESTEVE J LORATAMAYO E
Citation: Ja. Plaza et al., EFFECT OF SILICON-OXIDE, SILICON-NITRIDE AND POLYSILICON LAYERS ON THE ELECTROSTATIC PRESSURE DURING ANODIC BONDING, Sensors and actuators. A, Physical, 67(1-3), 1998, pp. 181-184
NEW BULK ACCELEROMETER FOR TRIAXIAL DETECTION
Authors: PLAZA JA CHEN H ESTEVE J LORATAMAYO E
Citation: Ja. Plaza et al., NEW BULK ACCELEROMETER FOR TRIAXIAL DETECTION, Sensors and actuators. A, Physical, 66(1-3), 1998, pp. 105-108
PHOTOLITHOGRAPHIC PACKAGING OF SILICON PRESSURE SENSORS
Authors: KRASSOW H CAMPABADAL F LORATAMAYO E
Citation: H. Krassow et al., PHOTOLITHOGRAPHIC PACKAGING OF SILICON PRESSURE SENSORS, Sensors and actuators. A, Physical, 66(1-3), 1998, pp. 279-283
THERMAL AND MECHANICAL ASPECTS FOR DESIGNING MICROMACHINED LOW-POWER GAS SENSORS
Authors: GOTZ A GRACIA I CANE C LORATAMAYO E
Citation: A. Gotz et al., THERMAL AND MECHANICAL ASPECTS FOR DESIGNING MICROMACHINED LOW-POWER GAS SENSORS, Journal of micromechanics and microengineering, 7(3), 1997, pp. 247-249
A MICROMACHINED SOLID-STATE INTEGRATED GAS SENSOR FOR THE DETECTION OF AROMATIC-HYDROCARBONS
Authors: GOTZ A GRACIA I CANE C LORATAMAYO E HORRILLO MC GETINO J GARCIA C GUTIERREZ J
Citation: A. Gotz et al., A MICROMACHINED SOLID-STATE INTEGRATED GAS SENSOR FOR THE DETECTION OF AROMATIC-HYDROCARBONS, Sensors and actuators. B, Chemical, 44(1-3), 1997, pp. 483-487
NEW FT ACCELEROMETER BASED ON SURFACE MICROMACHINING
Authors: PLAZA JA BENITEZ MA ESTEVE J LORATAMAYO E
Citation: Ja. Plaza et al., NEW FT ACCELEROMETER BASED ON SURFACE MICROMACHINING, Sensors and actuators. A, Physical, 61(1-3), 1997, pp. 342-345
NONDESTRUCTIVE IN-SITU TEST FOR ANODIC BONDING
Authors: PLAZA JA ESTEVE J LORATAMAYO E
Citation: Ja. Plaza et al., NONDESTRUCTIVE IN-SITU TEST FOR ANODIC BONDING, Sensors and actuators. A, Physical, 60(1-3), 1997, pp. 176-180
NONDESTRUCTIVE ANODIC BONDING TEST
Authors: PLAZA JA ESTEVE J LORATAMAYO E
Citation: Ja. Plaza et al., NONDESTRUCTIVE ANODIC BONDING TEST, Journal of the Electrochemical Society, 144(5), 1997, pp. 108-110
RESONANT SILICON ACCELEROMETERS IN BULK MICROMACHINING TECHNOLOGY - AN APPROACH
Authors: BURRER C ESTEVE J LORATAMAYO E
Citation: C. Burrer et al., RESONANT SILICON ACCELEROMETERS IN BULK MICROMACHINING TECHNOLOGY - AN APPROACH, Journal of microelectromechanical systems, 5(2), 1996, pp. 122-130
BIOCERAMICS - SIMULATED BODY-FLUID INTERFACES - PH AND ITS INFLUENCE OF HYDROXYAPATITE FORMATION
Authors: DEAZA PN GUITIAN F MERLOS A LORATAMAYO E DEAZA S
Citation: Pn. Deaza et al., BIOCERAMICS - SIMULATED BODY-FLUID INTERFACES - PH AND ITS INFLUENCE OF HYDROXYAPATITE FORMATION, Journal of materials science. Materials in medicine, 7(7), 1996, pp. 399-402
MULTILAYER ISFET MEMBRANES FOR MICROSYSTEMS APPLICATIONS
Authors: CANE C GOTZ A MERLOS A GRACIA I ERRACHID A LOSANTOS P LORATAMAYO E
Citation: C. Cane et al., MULTILAYER ISFET MEMBRANES FOR MICROSYSTEMS APPLICATIONS, Sensors and actuators. B, Chemical, 35(1-3), 1996, pp. 136-140
AN AUTOMATED APPROACH ON ELECTRICAL TECHNOLOGY CHARACTERIZATION AND ANALYSIS
Authors: PERELLO C LOZANO M MILLAN J LORATAMAYO E
Citation: C. Perello et al., AN AUTOMATED APPROACH ON ELECTRICAL TECHNOLOGY CHARACTERIZATION AND ANALYSIS, IEEE transactions on semiconductor manufacturing, 9(4), 1996, pp. 573-577
A PROCEDURE FOR THE DETERMINATION OF THE EFFECTIVE MOBILITY IN AN N-MOSFET IN THE MODERATE INVERSION REGION
Authors: BANQUERI J LOPEZVILLANUEVA JA GAMIZ F CARCELLER JE LORATAMAYO E LOZANO M
Citation: J. Banqueri et al., A PROCEDURE FOR THE DETERMINATION OF THE EFFECTIVE MOBILITY IN AN N-MOSFET IN THE MODERATE INVERSION REGION, Solid-state electronics, 39(6), 1996, pp. 875-883
ELECTRICAL CHARACTERIZATION OF THE AGING OF SEALING MATERIALS FOR ISFET CHEMICAL SENSORS
Authors: GRACIA I CANE C LORATAMAYO E
Citation: I. Gracia et al., ELECTRICAL CHARACTERIZATION OF THE AGING OF SEALING MATERIALS FOR ISFET CHEMICAL SENSORS, Sensors and actuators. B, Chemical, 24(1-3), 1995, pp. 206-210
ABILITY OF CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE TO STUDY SPATIAL-DISTRIBUTION AND ELECTRIC-FIELD DEPENDENCE OF EMISSION PROPERTIES OF DEEP LEVELS IN SEMICONDUCTORS
Authors: DUENAS S CASTAN E QUINTANILLA L ENRIQUEZ L BARBOLLA J LORATAMAYO E MONTSERRAT J
Citation: S. Duenas et al., ABILITY OF CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE TO STUDY SPATIAL-DISTRIBUTION AND ELECTRIC-FIELD DEPENDENCE OF EMISSION PROPERTIES OF DEEP LEVELS IN SEMICONDUCTORS, Materials science and technology, 11(10), 1995, pp. 1074-1078
CHARACTERIZATION OF THE DAMAGE-INDUCED IN BORON-IMPLANTED AND RTA ANNEALED SILICON BY THE CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE
Authors: DUENAS S CASTAN E ENRIQUEZ L BARBOLLA J MONTSERRAT J LORATAMAYO E
Citation: S. Duenas et al., CHARACTERIZATION OF THE DAMAGE-INDUCED IN BORON-IMPLANTED AND RTA ANNEALED SILICON BY THE CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE, Semiconductor science and technology, 9(9), 1994, pp. 1637-1648
ELECTRICAL CHARACTERIZATION OF MOS STRUCTURES FABRICATED ON SF6 AND SF6+C2CIF5 REACTIVE ION ETCHED SILICON
Authors: CASTAN E VICENTE J BARBOLLA J CABRUJA E LORATAMAYO E
Citation: E. Castan et al., ELECTRICAL CHARACTERIZATION OF MOS STRUCTURES FABRICATED ON SF6 AND SF6+C2CIF5 REACTIVE ION ETCHED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1362-1366
Risultati: 1-18 |