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Citation: R. Schlaf et al., INFLUENCE OF ELECTROSTATIC FORCES ON THE INVESTIGATION OF DOPANT ATOMS IN LAYERED SEMICONDUCTORS BY SCANNING TUNNELING MICROSCOPY SPECTROSCOPY AND ATOMIC-FORCE MICROSCOPY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1466-1472

Authors: SCHMIDT A SCHLAF R LOUDER D CHAU LK CHEN SY FRITZ T LAWRENCE MF PARKINSON BA ARMSTRONG NR

Citation: A. Schmidt et al., EPITAXIAL-GROWTH OF THE IONIC POLYMER FLUOROALUMINUM PHTHALOCYANINE ON THE BASAL-PLANE OF SINGLE-CRYSTAL TIN DISULFIDE, Chemistry of materials, 7(11), 1995, pp. 2127-2135

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Citation: R. Schlaf et al., MOLECULAR-BEAM EPITAXY GROWTH OF THIN-FILMS OF SNS2 AND SNSE2 ON CLEAVED MICA AND THE BASAL PLANES OF SINGLE-CRYSTAL LAYERED SEMICONDUCTORS- REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, LOW-ENERGY-ELECTRON DIFFRACTION, PHOTOEMISSION, AND SCANNING-TUNNELING-MICROSCOPY ATOMIC-FORCE MICROSCOPY CHARACTERIZATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1761-1767

Authors: WHANGBO MH REN J CANADELL E LOUDER D PARKINSON BA BENGEL H MAGONOV SN

Citation: Mh. Whangbo et al., NATURE OF THE CHARGE-DENSITY-WAVE IMAGES OF LAYERED DICHALCOGENIDES 1T-TAX2 (X = S, SE) IN SCANNING TUNNELING AND ATOMIC FORCE MICROSCOPY, Journal of the American Chemical Society, 115(9), 1993, pp. 3760-3765