MOLECULAR-BEAM EPITAXY GROWTH OF THIN-FILMS OF SNS2 AND SNSE2 ON CLEAVED MICA AND THE BASAL PLANES OF SINGLE-CRYSTAL LAYERED SEMICONDUCTORS- REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, LOW-ENERGY-ELECTRON DIFFRACTION, PHOTOEMISSION, AND SCANNING-TUNNELING-MICROSCOPY ATOMIC-FORCE MICROSCOPY CHARACTERIZATION

Authors
SCHLAF R LOUDER D LANG O PETTENKOFER C JAEGERMANN W NEBESNY KW LEE PA PARKINSON BA ARMSTRONG NR
Citation
R. Schlaf et al., MOLECULAR-BEAM EPITAXY GROWTH OF THIN-FILMS OF SNS2 AND SNSE2 ON CLEAVED MICA AND THE BASAL PLANES OF SINGLE-CRYSTAL LAYERED SEMICONDUCTORS- REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, LOW-ENERGY-ELECTRON DIFFRACTION, PHOTOEMISSION, AND SCANNING-TUNNELING-MICROSCOPY ATOMIC-FORCE MICROSCOPY CHARACTERIZATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1761-1767
Citations number
39
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
3
Year of publication
1995
Part
2
Pages
1761 - 1767
Database
ISI
SICI code
0734-2101(1995)13:3<1761:MEGOTO>2.0.ZU;2-N