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Results:
1-15
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Results: 15
Authors:
MARCHIANDO JF
KOPANSKI JJ
LOWNEY JR
Citation: Jf. Marchiando et al., MODEL DATABASE FOR DETERMINING DOPANT PROFILES FROM SCANNING CAPACITANCE MICROSCOPE MEASUREMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 463-470
Authors:
ROBINS LH
LOWNEY JR
WICKENDEN DK
Citation: Lh. Robins et al., CATHODOLUMINESCENCE, PHOTOLUMINESCENCE, AND OPTICAL ABSORBENCY SPECTROSCOPY OF ALUMINUM GALLIUM NITRIDE (ALXGA1-XN) FILMS, Journal of materials research, 13(9), 1998, pp. 2480-2497
Authors:
FARROW RC
POSTEK MT
KEERY WJ
JONES SN
LOWNEY JR
BLAKEY M
FETTER LA
GRIFFITH JE
LIDDLE JA
HOPKINS LC
HUGGINS HA
PEABODY M
NOVEMBRE A
Citation: Rc. Farrow et al., APPLICATION OF TRANSMISSION ELECTRON DETECTION TO SCALPEL MASK METROLOGY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2167-2172
Authors:
KOPANSKI JJ
MARCHIANDO JF
LOWNEY JR
Citation: Jj. Kopanski et al., SCANNING CAPACITANCE MICROSCOPY APPLIED TO 2-DIMENSIONAL DOPANT PROFILING OF SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 46-51
Authors:
KOPANSKI JJ
MARCHIANDO JF
LOWNEY JR
Citation: Jj. Kopanski et al., SCANNING CAPACITANCE MICROSCOPY MEASUREMENTS AND MODELING - PROGRESS TOWARDS DOPANT PROFILING OF SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 242-247
Authors:
LOWNEY JR
Citation: Jr. Lowney, MONTE-CARLO SIMULATION OF SCANNING ELECTRON-MICROSCOPE SIGNALS FOR LITHOGRAPHIC METROLOGY, Scanning, 18(4), 1996, pp. 301-306
Authors:
LOWNEY JR
Citation: Jr. Lowney, MONSEL-II - MONTE-CARLO SIMULATION OF SEM SIGNALS FOR LINEWIDTH METROLOGY, Microbeam analysis, 4(3), 1995, pp. 131-136
Authors:
LOWNEY JR
Citation: Jr. Lowney, USE OF MONTE-CARLO MODELING FOR INTERPRETING SCANNING ELECTRON-MICROSCOPE LINEWIDTH MEASUREMENTS, Scanning, 17(5), 1995, pp. 281-286
Authors:
LOWNEY JR
Citation: Jr. Lowney, MODEL FOR DETERMINING THE DENSITY AND MOBILITY OF CARRIERS IN THIN SEMICONDUCTING LAYERS WITH ONLY 2 CONTACTS, Journal of applied physics, 78(2), 1995, pp. 1008-1012
Authors:
TSENG WF
DAGATA JA
SILVER RM
FU J
LOWNEY JR
Citation: Wf. Tseng et al., JUNCTION LOCATIONS BY SCANNING-TUNNELING-MICROSCOPY - IN-AIR-AMBIENT INVESTIGATION OF PASSIVATED GAAS PN JUNCTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 373-377
Authors:
WANG L
HAEGEL NM
LOWNEY JR
Citation: L. Wang et al., BAND-TO-BAND PHOTOLUMINESCENCE AND LUMINESCENCE EXCITATION IN EXTREMELY HEAVILY CARBON-DOPED EPITAXIAL GAAS, Physical review. B, Condensed matter, 49(16), 1994, pp. 10976-10985
Authors:
LOWNEY JR
THURBER WR
SEILER DG
Citation: Jr. Lowney et al., TRANSVERSE MAGNETORESISTANCE - A NOVEL 2-TERMINAL METHOD FOR MEASURING THE CARRIER DENSITY AND MOBILITY OF A SEMICONDUCTOR LAYER, Applied physics letters, 64(22), 1994, pp. 3015-3017
Authors:
POSTEK MT
LOWNEY JR
VLADAR AE
KEERY WJ
MARX E
LARRABEE RD
Citation: Mt. Postek et al., X-RAY-LITHOGRAPHY MASK METROLOGY - USE OF TRANSMITTED ELECTRONS IN ANSEM FOR LINEWIDTH MEASUREMENT, Journal of research of the National Institute of Standards and Technology, 98(4), 1993, pp. 415-445
Authors:
LOWNEY JR
SEILER DG
THURBER WR
YU Z
SONG XN
LITTLER CL
Citation: Jr. Lowney et al., HEAVILY ACCUMULATED SURFACES OF MERCURY CADMIUM TELLURIDE DETECTORS -THEORY AND EXPERIMENT, Journal of electronic materials, 22(8), 1993, pp. 985-991
Authors:
SEILER DG
MAYO S
LOWNEY JR
Citation: Dg. Seiler et al., HG1-XCDXTE CHARACTERIZATION MEASUREMENTS - CURRENT PRACTICE AND FUTURE-NEEDS, Semiconductor science and technology, 8(6), 1993, pp. 753-776
Risultati:
1-15
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