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Results: 1-13 |
Results: 13
OBSERVATION OF A MEYER-NELDEL RULE FOR HOPPING CONDUCTIVITY
Authors: LUBIANIKER Y BALBERG I
Citation: Y. Lubianiker et I. Balberg, OBSERVATION OF A MEYER-NELDEL RULE FOR HOPPING CONDUCTIVITY, Physica status solidi. b, Basic research, 205(1), 1998, pp. 119-124
A COMPARATIVE-STUDY OF THE MEYER-NELDEL RULE IN POROUS SILICON AND HYDROGENATED AMORPHOUS-SILICON
Authors: LUBIANIKER Y BALBERG I
Citation: Y. Lubianiker et I. Balberg, A COMPARATIVE-STUDY OF THE MEYER-NELDEL RULE IN POROUS SILICON AND HYDROGENATED AMORPHOUS-SILICON, Journal of non-crystalline solids, 230, 1998, pp. 180-184
THE LIGHT-INTENSITY EXPONENT OF THE MINORITY-CARRIER LIFETIME AND THEMOBILITY GAP STATES IN A-SI-H
Authors: BALBERG I LUBIANIKER Y FONSECA L WEISZ SZ
Citation: I. Balberg et al., THE LIGHT-INTENSITY EXPONENT OF THE MINORITY-CARRIER LIFETIME AND THEMOBILITY GAP STATES IN A-SI-H, Journal of non-crystalline solids, 230, 1998, pp. 206-210
SENSITIZATION OF THE MINORITY-CARRIER LIFETIME IN HYDROGENATED AMORPHOUS-SILICON
Authors: RAPAPORT R LUBIANIKER Y BALBERG I FONSECA L
Citation: R. Rapaport et al., SENSITIZATION OF THE MINORITY-CARRIER LIFETIME IN HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 72(1), 1998, pp. 103-105
SURFACE PHOTOVOLTAGE SPECTROSCOPY OF POROUS SILICON
Authors: BURSTEIN L SHAPIRA Y PARTEE J SHINAR J LUBIANIKER Y BALBERG I
Citation: L. Burstein et al., SURFACE PHOTOVOLTAGE SPECTROSCOPY OF POROUS SILICON, Physical review. B, Condensed matter, 55(4), 1997, pp. 1930-1933
THERMAL QUENCHING OF THE MINORITY-CARRIER LIFETIME IN A-SI-H
Authors: LUBIANIKER Y BALBERG I FONSECA LF
Citation: Y. Lubianiker et al., THERMAL QUENCHING OF THE MINORITY-CARRIER LIFETIME IN A-SI-H, Physical review. B, Condensed matter, 55(24), 1997, pp. 15997-16000
2 MEYER-NELDEL RULES IN POROUS SILICON
Authors: LUBIANIKER Y BALBERG I
Citation: Y. Lubianiker et I. Balberg, 2 MEYER-NELDEL RULES IN POROUS SILICON, Physical review letters, 78(12), 1997, pp. 2433-2436
THE RELATION BETWEEN PHOTOTRANSPORT AND PHOTOLUMINESCENCE IN POROUS SILICON
Authors: BALBERG I LUBIANIKER Y SHINAR J PARTEE J SHAPIRA Y BURSTEIN L WEISZ SZ GOMEZ M
Citation: I. Balberg et al., THE RELATION BETWEEN PHOTOTRANSPORT AND PHOTOLUMINESCENCE IN POROUS SILICON, Journal of luminescence, 72-4, 1997, pp. 314-315
POROUS SILICON AS A NEAR-IDEAL DISORDERED SEMICONDUCTOR
Authors: LUBIANIKER Y BALBERG I PARTEE J SHINAR J
Citation: Y. Lubianiker et al., POROUS SILICON AS A NEAR-IDEAL DISORDERED SEMICONDUCTOR, Journal of non-crystalline solids, 200, 1996, pp. 949-952
FOLLOWING DIRECTLY THE EFFECT OF THE VARIOUS DEEP STATES ON THE PHOTOTRANSPORT PROPERTIES OF A-SI-H
Authors: LUBIANIKER Y BALBERG I FEFER E SHAPIRA Y
Citation: Y. Lubianiker et al., FOLLOWING DIRECTLY THE EFFECT OF THE VARIOUS DEEP STATES ON THE PHOTOTRANSPORT PROPERTIES OF A-SI-H, Journal of non-crystalline solids, 200, 1996, pp. 309-312
DEPENDENCE OF THE PHOTOTRANSPORT PROPERTIES ON THE POSITION OF THE FERMI-LEVEL IN POLYCRYSTALLINE CUINS2 FILMS
Authors: LUBIANIKER Y BITON G BALBERG I WALTER T SCHOCK HW RESTO O WEISZ SZ
Citation: Y. Lubianiker et al., DEPENDENCE OF THE PHOTOTRANSPORT PROPERTIES ON THE POSITION OF THE FERMI-LEVEL IN POLYCRYSTALLINE CUINS2 FILMS, Journal of applied physics, 79(2), 1996, pp. 876-885
EVIDENCE FOR THE DEFECT-POOL MODEL FROM INDUCED RECOMBINATION LEVEL SHIFTS IN UNDOPED A-SIH
Authors: BALBERG I LUBIANIKER Y
Citation: I. Balberg et Y. Lubianiker, EVIDENCE FOR THE DEFECT-POOL MODEL FROM INDUCED RECOMBINATION LEVEL SHIFTS IN UNDOPED A-SIH, Physical review. B, Condensed matter, 48(12), 1993, pp. 8709-8714
THE DEPENDENCIES OF THE 2 CARRIER MOBILITY-LIFETIME PRODUCTS ON THE POSITION OF THE FERMI-LEVEL IN A-SI-H
Authors: LUBIANIKER Y BALBERG I WEISZ SZ GOMEZ M
Citation: Y. Lubianiker et al., THE DEPENDENCIES OF THE 2 CARRIER MOBILITY-LIFETIME PRODUCTS ON THE POSITION OF THE FERMI-LEVEL IN A-SI-H, Journal of non-crystalline solids, 166, 1993, pp. 399-402
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