Authors: LUI OKB QUINN MJ TAM SWB BROWN TM MIGLIORATO P OHSHIMA H

Citation: Okb. Lui et al., INVESTIGATION OF THE LOW-FIELD LEAKAGE CURRENT MECHANISM IN POLYSILICON TFTS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 213-217

Authors: LUI OKB MIGLIORATO P

Citation: Okb. Lui et P. Migliorato, A NEW GENERATION-RECOMBINATION MODEL FOR DEVICE SIMULATION INCLUDING THE POOLE-FRENKEL-EFFECT AND PHONON-ASSISTED TUNNELING, Solid-state electronics, 41(4), 1997, pp. 575-583