INVESTIGATION OF THE LOW-FIELD LEAKAGE CURRENT MECHANISM IN POLYSILICON TFTS

Authors
LUI OKB QUINN MJ TAM SWB BROWN TM MIGLIORATO P OHSHIMA H
Citation
Okb. Lui et al., INVESTIGATION OF THE LOW-FIELD LEAKAGE CURRENT MECHANISM IN POLYSILICON TFTS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 213-217
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
1
Year of publication
1998
Pages
213 - 217
Database
ISI
SICI code
0018-9383(1998)45:1<213:IOTLLC>2.0.ZU;2-R
Abstract
Following extensive characterization and simulation of the behavior of low-temperature laser recrystallized polysilicon thin-film transistor s (TFT's), we propose a low field leakage current mechanism which expl ains to a good degree of accuracy at a low drain to source voltage (V- DS) the dependence of the leakage current on the device's active layer thickness, density-of-states (DOS), bias-stress degradation and activ e layer length.