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Results: 2
TECHNIQUES FOR REDUCING THE REVERSE SHORT-CHANNEL EFFECT IN SUB-0.5 MU-M CMOS
Authors: LUTZE J VENKATESAN S
Citation: J. Lutze et S. Venkatesan, TECHNIQUES FOR REDUCING THE REVERSE SHORT-CHANNEL EFFECT IN SUB-0.5 MU-M CMOS, IEEE electron device letters, 16(9), 1995, pp. 373-375
DRAMATIC INCREASES IN LATCHUP HOLDING VOLTAGE FOR SUB-0.5 MU-M CMOS USING SHALLOW S D JUNCTIONS/
Authors: LUTZE J VENKATESAN S POON S
Citation: J. Lutze et al., DRAMATIC INCREASES IN LATCHUP HOLDING VOLTAGE FOR SUB-0.5 MU-M CMOS USING SHALLOW S D JUNCTIONS/, IEEE electron device letters, 15(11), 1994, pp. 443-445
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