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Results:
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Results: 3
ELECTRICAL AND OPTICAL CHARACTERIZATION OF HEAVILY-DOPED GAAS-C BASESOF HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors:
LYE BC HOUSTON PA BUTTON CC DAVID JPR
Citation:
Bc. Lye et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF HEAVILY-DOPED GAAS-C BASESOF HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 42(1), 1998, pp. 115-120
GAINP ALGAAS/GAINP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH ZERO CONDUCTION-BAND SPIKE AT THE COLLECTOR/
Authors:
LYE BC HOUSTON PA YOW HK BUTTON CC
Citation:
Bc. Lye et al., GAINP ALGAAS/GAINP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH ZERO CONDUCTION-BAND SPIKE AT THE COLLECTOR/, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2417-2421
ELECTRON-MOBILITY ENHANCEMENT IN HEAVILY-DOPED GAAS-C HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors:
LYE BC YOW HK HOUSTON PA BUTTON CC
Citation:
Bc. Lye et al., ELECTRON-MOBILITY ENHANCEMENT IN HEAVILY-DOPED GAAS-C HETEROJUNCTION BIPOLAR-TRANSISTORS, Electronics Letters, 32(25), 1996, pp. 2351-2352
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