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Results:
1-11
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Results: 11
Authors:
Libertino, S
Coffa, S
Spinella, C
La Magna, A
Privitera, V
Citation: S. Libertino et al., Point defect diffusion and clustering in ion implanted c-Si, NUCL INST B, 178, 2001, pp. 25-32
Authors:
La Magna, A
Coffa, S
Libertino, S
Brambilla, L
Alippi, P
Colombo, L
Citation: A. La Magna et al., A multi-scale atomistic study of the interstitials agglomeration in crystalline Si, NUCL INST B, 178, 2001, pp. 154-159
Authors:
Whelan, S
Privitera, V
Mannino, G
Italia, M
Bongiorno, C
La Magna, A
Napolitani, E
Citation: S. Whelan et al., Electrical activation of ultralow energy As implants in Si, J APPL PHYS, 90(8), 2001, pp. 3873-3878
Authors:
Lombardo, S
La Magna, A
Crupi, I
Gerardi, C
Crupi, F
Citation: S. Lombardo et al., Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown, APPL PHYS L, 79(10), 2001, pp. 1522-1524
Authors:
La Magna, A
Coffa, S
Citation: A. La Magna et S. Coffa, Accelerated Monte Carlo algorithms for defect diffusion and clustering, COMP MAT SC, 17(1), 2000, pp. 21-33
Authors:
Privitera, V
Napolitani, E
Priolo, F
Moffatt, S
La Magna, A
Mannino, G
Carnera, A
Picariello, A
Citation: V. Privitera et al., Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon, MAT SC S PR, 2(1), 1999, pp. 35-44
Authors:
La Magna, A
Pucci, R
Citation: A. La Magna et R. Pucci, A mixed approach to the study of the magnetic and pairing correlations in the Bechgaard salts under pressure, PHYSICA B, 265(1-4), 1999, pp. 164-169
Authors:
La Magna, A
Coffa, S
Colombo, L
Citation: A. La Magna et al., A lattice kinetic Monte Carlo code for the description of vacancy diffusion and self-organization in Si, NUCL INST B, 148(1-4), 1999, pp. 262-267
Authors:
La Magna, A
Coffa, S
Colombo, L
Citation: A. La Magna et al., Role of extended vacancy-vacancy interaction on the ripening of voids in silicon, PHYS REV L, 82(8), 1999, pp. 1720-1723
Authors:
Lombardo, S
La Magna, A
Spinella, C
Gerardi, C
Crupi, F
Citation: S. Lombardo et al., Degradation and hard breakdown transient of thin gate oxides in metal-SiO2-Si capacitors: Dependence on oxide thickness, J APPL PHYS, 86(11), 1999, pp. 6382-6391
Authors:
Lombardo, S
La Magna, A
Gerardi, C
Alessandri, M
Crupi, F
Citation: S. Lombardo et al., Soft breakdown of gate oxides in metal-SiO2-Si capacitors under stress with hot electrons, APPL PHYS L, 75(8), 1999, pp. 1161-1163
Risultati:
1-11
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