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Results: 26-30/30
Authors:
Lacaita, AL
Perron, LM
Citation: Al. Lacaita et Lm. Perron, Physics and characterization of transient effects in SOI transistors, MICROEL ENG, 48(1-4), 1999, pp. 319-326
Authors:
Spinelli, AS
Lacaita, AL
Minelli, D
Ghidini, G
Citation: As. Spinelli et al., Analysis of space and energy distribution of stress-induced oxide traps, MICROEL REL, 39(2), 1999, pp. 215-219
Authors:
Mazzoni, G
Lacaita, AL
Perron, LM
Pirovano, A
Citation: G. Mazzoni et al., On surface roughness-limited mobility in highly doped n-MOSEET's, IEEE DEVICE, 46(7), 1999, pp. 1423-1428
Authors:
Pacelli, A
Villa, S
Lacaita, AL
Perron, LM
Citation: A. Pacelli et al., Quantum effects on the extraction of MOS oxide traps by 1/f noise measurements, IEEE DEVICE, 46(5), 1999, pp. 1029-1035
Authors:
Villa, S
De Geronimo, G
Pacelli, A
Lacaita, AL
Longoni, A
Citation: S. Villa et al., Application of 1/f noise measurements to the characterization of near-interface oxide traps in ULSI n-MOSFETs, MICROEL REL, 38(12), 1998, pp. 1919-1923