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Citation: M. Lades et G. Wachutka, Electrothermal analysis of SiC power devices using physically-based devicesimulation, SOL ST ELEC, 44(2), 2000, pp. 359-368

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Authors: Kaindl, W Lades, M Kaminski, N Niemann, E Wachutka, G

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Authors: Lades, M Kaindl, W Kaminski, N Niemann, E Wachutka, G

Citation: M. Lades et al., Dynamics of incomplete ionized dopants and their impact on 4H/6H-SiC devices, IEEE DEVICE, 46(3), 1999, pp. 598-604