AAAAAA
Results:
1-17
|
Results: 17
Authors:
Feltin, E
Dalmasso, S
de Mierry, P
Beaumont, B
Lahreche, H
Bouille, A
Haas, H
Leroux, M
Gibart, P
Citation: E. Feltin et al., Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy, JPN J A P 2, 40(7B), 2001, pp. L738-L740
Authors:
Neu, G
Teisseire, M
Lemasson, P
Lahreche, H
Grandjean, N
Semond, F
Beaumont, B
Grzegory, I
Porowski, S
Triboulet, R
Citation: G. Neu et al., Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors, PHYSICA B, 302, 2001, pp. 39-53
Authors:
Lahreche, H
Nataf, G
Feltin, E
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Growth of GaN on (111) Si: a route towards self-supported GaN, J CRYST GR, 231(3), 2001, pp. 329-334
Authors:
Hoel, V
Guhel, Y
Boudart, B
Gaquiere, C
De Jaeger, JC
Lahreche, H
Gibart, P
Citation: V. Hoel et al., Static measurements of GaN MESFETs on (111) Si substrates, ELECTR LETT, 37(17), 2001, pp. 1095-1096
Authors:
Feltin, E
Beaumont, B
Laugt, M
de Mierry, P
Vennegues, P
Lahreche, H
Leroux, M
Gibart, P
Citation: E. Feltin et al., Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy, APPL PHYS L, 79(20), 2001, pp. 3230-3232
Authors:
Lahreche, H
Vaille, M
Vennegues, P
Laugt, M
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Microstructural analysis of III-V nitrides grown on 6H-SiC by metal-organic vapour phase epitaxy (MOVPE), DIAM RELAT, 9(3-6), 2000, pp. 452-455
Authors:
Boudart, B
Trassaert, S
Wallart, X
Pesant, JC
Yaradou, O
Theron, D
Crosnier, Y
Lahreche, H
Omnes, F
Citation: B. Boudart et al., Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN, J ELEC MAT, 29(5), 2000, pp. 603-606
Authors:
Lahreche, H
Vennegues, P
Tottereau, O
Laugt, M
Lorenzini, P
Leroux, M
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111), J CRYST GR, 217(1-2), 2000, pp. 13-25
Authors:
Lahreche, H
Leroux, M
Laugt, M
Vaille, M
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy, J APPL PHYS, 87(1), 2000, pp. 577-583
Authors:
Vennegues, P
Lahreche, H
Citation: P. Vennegues et H. Lahreche, Phase separation in metalorganic vapor-phase epitaxy AlxGa(1-x)N films deposited on 6H-SiC, APPL PHYS L, 77(26), 2000, pp. 4310-4312
Authors:
de Mierry, P
Lahreche, H
Haffouz, S
Vennegues, P
Beaumont, B
Omnes, F
Gibart, P
Citation: P. De Mierry et al., Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation., MAT SCI E B, 59(1-3), 1999, pp. 24-28
Authors:
Omnes, F
Marenco, N
Haffouz, S
Lahreche, H
de Mierry, P
Beaumont, B
Hageman, P
Monroy, E
Calle, F
Munoz, E
Citation: F. Omnes et al., Low pressure MOVPE grown AlGaN for UV photodetector applications, MAT SCI E B, 59(1-3), 1999, pp. 401-406
Authors:
Neu, G
Teisseire, M
Beaumont, B
Lahreche, H
Gibart, P
Citation: G. Neu et al., Near-band gap selective photoluminescence in wurtzite GaN, PHYS ST S-B, 216(1), 1999, pp. 79-83
Authors:
Lahreche, H
Vennegues, P
Vaille, M
Beaumont, B
Laugt, M
Lorenzini, P
Gibart, P
Citation: H. Lahreche et al., Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers, SEMIC SCI T, 14(11), 1999, pp. L33-L36
Authors:
Lahreche, H
Vaille, M
Beaumont, B
Laugt, M
Vennegues, P
Gibart, P
Citation: H. Lahreche et al., Metal organic vapour phase epitaxy (MOVPE) growth of GaN(n)/SiC(p) heterostructures, PHYS ST S-A, 176(1), 1999, pp. 109-112
Authors:
Lahreche, H
Vennegues, P
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth, J CRYST GR, 205(3), 1999, pp. 245-252
Authors:
Haffouz, S
Lahreche, H
Vennegues, P
de Mierry, P
Beaumont, B
Omnes, F
Gibart, P
Citation: S. Haffouz et al., The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy, APPL PHYS L, 73(9), 1998, pp. 1278-1280
Risultati:
1-17
|