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Results:
1-21
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Results: 21
Authors:
Bolley, P
Lai, PT
Citation: P. Bolley et Pt. Lai, Index property in Holderian theory for the Dirichlet exterior problem, COMM PART D, 26(1-2), 2001, pp. 315-334
Authors:
Xu, JP
Lai, PT
Cheng, YC
Citation: Jp. Xu et al., 1/f noise behaviors of NO-nitrided n-MOSFETs, SOL ST ELEC, 45(3), 2001, pp. 431-433
Authors:
Chakraborty, S
Lai, PT
Xu, JP
Chan, CL
Cheng, YC
Citation: S. Chakraborty et al., Interface properties of N2O-annealed SiC metal oxide semiconductor devices, SOL ST ELEC, 45(3), 2001, pp. 471-474
Authors:
Chakraborty, C
Lai, PT
Chakraborty, S
Citation: C. Chakraborty et al., Low- and high-field analysis of longitudinal diffusivity of n-InSb, J PHYS CH S, 62(6), 2001, pp. 1111-1115
Authors:
Xu, JP
Lai, PT
Cheng, YC
Citation: Jp. Xu et al., Gate dielectrics prepared by double nitridation in NO and N2O, APPL PHYS A, 70(1), 2000, pp. 101-105
Authors:
Li, B
Lai, PT
Li, GQ
Zeng, SH
Huang, MQ
Citation: B. Li et al., Photoelectrical properties of Ba1-xLaxTiO3 thin-film resistor, SENS ACTU-A, 86(3), 2000, pp. 226-230
Authors:
Xu, JP
Lai, PT
Chan, CL
Li, B
Cheng, YC
Citation: Jp. Xu et al., Improved performance and reliability of N2O-grown oxynitride on 6H-SiC, IEEE ELEC D, 21(6), 2000, pp. 298-300
Authors:
Xu, JP
Lai, PT
Cheng, YC
Citation: Jp. Xu et al., Energy levels of interface states generated in n-MOSFETs by hot-carrier stresses, SOL ST ELEC, 44(3), 2000, pp. 527-534
Authors:
Li, GQ
Lai, PT
Huang, MQ
Zeng, SH
Li, B
Cheng, YC
Citation: Gq. Li et al., A humidity-sensing model for metal-insulator-semiconductor capacitors withporous ceramic film, J APPL PHYS, 87(12), 2000, pp. 8716-8720
Authors:
Xu, JP
Lai, PT
Cheng, YC
Citation: Jp. Xu et al., Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's, IEEE DEVICE, 47(1), 2000, pp. 109-112
Authors:
Xu, JP
Lai, PT
Chan, CL
Cheng, YC
Citation: Jp. Xu et al., Improved interface properties of p-type 6H-SiC/SiO2 system by NH3 pretreatment, APPL PHYS L, 76(3), 2000, pp. 372-374
Authors:
Lai, PT
Chakraborty, S
Chan, CL
Cheng, YC
Citation: Pt. Lai et al., Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal-oxide-semiconductor system, APPL PHYS L, 76(25), 2000, pp. 3744-3746
Authors:
Li, GQ
Lai, PT
Zeng, SH
Huang, MQ
Li, B
Citation: Gq. Li et al., A new thin-film humidity and thermal micro-sensor with Al/SrNbxTi1-xO3/SiO2/Si structure, SENS ACTU-A, 75(1), 1999, pp. 70-74
Authors:
Lai, PT
Xu, JP
Cheng, YC
Citation: Pt. Lai et al., Improvement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardment, IEEE ELEC D, 20(4), 1999, pp. 149-151
Authors:
Lai, PT
Li, B
Chan, CL
Sin, JKO
Citation: Pt. Lai et al., Spreading-resistance temperature sensor on silicon-on-insulator, IEEE ELEC D, 20(11), 1999, pp. 589-591
Authors:
Chakraborty, S
Hara, K
Lai, PT
Citation: S. Chakraborty et al., New microhumidity field-effect transistor sensor in ppm(v) level, REV SCI INS, 70(2), 1999, pp. 1565-1567
Authors:
Xu, JP
Lai, PT
Cheng, YC
Citation: Jp. Xu et al., Electrical properties of different NO-annealed oxynitrides, J NON-CRYST, 254, 1999, pp. 94-98
Authors:
Xu, JP
Lai, PT
Cheng, YC
Citation: Jp. Xu et al., 1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses, J APPL PHYS, 86(9), 1999, pp. 5203-5206
Authors:
Lai, PT
Li, GQ
Huang, MQ
Zeng, SH
Cheng, YC
Citation: Pt. Lai et al., A study of various oxide/silicon interfaces by Ar+ backsurface bombardment, J APPL PHYS, 85(4), 1999, pp. 2253-2256
Authors:
Lai, PT
Xu, JP
Cheng, YC
Citation: Pt. Lai et al., Interface properties of NO-annealed N2O-grown oxynitride, IEEE DEVICE, 46(12), 1999, pp. 2311-2314
Authors:
Zeng, X
Lai, PT
Xu, JP
Citation: X. Zeng et al., The effects of duty cycle and voltage swing of gale pulse on the AC-stress-induced degradation of nMOSFETs with N2O gate oxides, MICROEL REL, 38(12), 1998, pp. 1925-1929
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