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Authors: Lander, RJP Ponomarev, YV van Berkum, JGM de Boer, WB Loo, R Caymax, M

Citation: Rjp. Lander et al., Drift mobilities and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3 < x < 0.4) grown on Si, J APPL PHYS, 88(4), 2000, pp. 2016-2023

Authors: Lambert, AD Alderman, B Lander, RJP Parker, EHC Whall, TE

Citation: Ad. Lambert et al., Low frequency noise measurements of p-channel SI(1-x)GE(x) MOSFET's, IEEE DEVICE, 46(7), 1999, pp. 1484-1486

Authors: McGregor, BMM Lander, RJP Phillips, PJ Parker, EHC Whall, TE

Citation: Bmm. Mcgregor et al., Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si : B/SiGe/Si heterostructures, APPL PHYS L, 74(9), 1999, pp. 1245-1247