ACNP - Italian Periodicals Catalogue

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Results: 10

Growth at GaN/AlN hetero structures: a local view

Authors: Boscherini, F Lantier, R Rizzi, A D'Acapito, F Mobilio, S

Citation: F. Boscherini et al., Growth at GaN/AlN hetero structures: a local view, MAT SCI E B, 86(3), 2001, pp. 225-227

Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide

Authors: DeVittorio, M Coli, G Rinaldi, R Gigli, G Cingolani, R De Salvador, D Berti, M Drigo, A Fucilli, F Ligonzo, T Augelli, V Rizzi, A Lantier, R Freundt, D Luth, H Neubauer, B Gerthsen, D

Citation: M. Devittorio et al., Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide, SOL ST ELEC, 44(3), 2000, pp. 465-470

Boundary conditions and the macroscopic field at SiC/AlN and SiC/GaN heterostructures

Authors: Rizzi, A Lantier, R Luth, H

Citation: A. Rizzi et al., Boundary conditions and the macroscopic field at SiC/AlN and SiC/GaN heterostructures, PHYS ST S-A, 177(1), 2000, pp. 165-171

AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fields

Authors: Rizzi, A Lantier, R Monti, F Luth, H Della Sala, F Di Carlo, A Lugli, P

Citation: A. Rizzi et al., AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fields, J VAC SCI B, 17(4), 1999, pp. 1674-1681

Direct evidence of spontaneous polarization effect in GaN grown on SiC(0001): Heterojunction electronic properties

Authors: Lantier, R Boscherini, F Rizzi, A D'Acapito, F Mobilio, S Luth, H

Citation: R. Lantier et al., Direct evidence of spontaneous polarization effect in GaN grown on SiC(0001): Heterojunction electronic properties, PHYS ST S-A, 176(1), 1999, pp. 615-619

Molecular beam epitaxy (MBE) growth and structural properties of GaN and AlN on 3C-SiC(0 0 1) substrates

Authors: Gerthsen, D Neubauer, B Dieker, C Lantier, R Rizzi, A Luth, H

Citation: D. Gerthsen et al., Molecular beam epitaxy (MBE) growth and structural properties of GaN and AlN on 3C-SiC(0 0 1) substrates, J CRYST GR, 200(3-4), 1999, pp. 353-361

Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers

Authors: Muller, BH Lantier, R Sorba, L Heun, S Rubini, S Lazzarino, M Franciosi, A Napolitani, E Romanato, F Drigo, AV Lazzarini, L Salviati, G

Citation: Bh. Muller et al., Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers, J APPL PHYS, 85(12), 1999, pp. 8160-8169

Evidence for relaxed and high-quality growth of GaN on SiC(0001) (vol 74, pg 3308, 1999)

Authors: Boscherini, F Lantier, R Rizzi, A D'Acapito, F Mobilio, S

Citation: F. Boscherini et al., Evidence for relaxed and high-quality growth of GaN on SiC(0001) (vol 74, pg 3308, 1999), APPL PHYS L, 75(2), 1999, pp. 304-304

Evidence for relaxed and high-quality growth of GaN on SiC(0001)

Authors: Boscherini, F Lantier, R Rizzi, A D'Acapito, F Mobilio, S

Citation: F. Boscherini et al., Evidence for relaxed and high-quality growth of GaN on SiC(0001), APPL PHYS L, 74(22), 1999, pp. 3308-3310

Resonant second harmonic generation in ZnSe bulk microcavity

Authors: Pellegrini, V Colombelli, R Carusotto, I Beltram, F Rubini, S Lantier, R Franciosi, A Vinegoni, C Pavesi, L

Citation: V. Pellegrini et al., Resonant second harmonic generation in ZnSe bulk microcavity, APPL PHYS L, 74(14), 1999, pp. 1945-1947

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