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Results: 1-7 |
Results: 7
Systematics of 4f electron energies relative to host bands by resonant photoemission of rare-earth ions in aluminum garnets - art. no. 085107
Authors: Thiel, CW Cruguel, H Wu, H Sun, Y Lapeyre, GJ Cone, RL Equall, RW Macfarlane, RM
Citation: Cw. Thiel et al., Systematics of 4f electron energies relative to host bands by resonant photoemission of rare-earth ions in aluminum garnets - art. no. 085107, PHYS REV B, 6408(8), 2001, pp. 5107
Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces
Authors: Brillson, LJ Young, AP Levin, TM Jessen, GH Schafer, J Yang, Y Xu, SH Cruguel, H Lapeyre, GJ Ponce, FA Naoi, Y Tu, C McKenzie, JD Abernathy, CR
Citation: Lj. Brillson et al., Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces, MAT SCI E B, 75(2-3), 2000, pp. 218-223
Photoelectron diffraction imaging for C2H2 and C2H4 chemisorbed on Si(100)reveals a new bonding configuration
Authors: Xu, SH Keeffe, M Yang, Y Chen, C Yu, M Lapeyre, GJ Rotenberg, E Denlinger, J Yates, JT
Citation: Sh. Xu et al., Photoelectron diffraction imaging for C2H2 and C2H4 chemisorbed on Si(100)reveals a new bonding configuration, PHYS REV L, 84(5), 2000, pp. 939-942
Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces
Authors: Yang, Y Mishra, S Cerrina, F Xu, SH Cruguel, H Lapeyre, GJ Schetzina, JF
Citation: Y. Yang et al., Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces, J VAC SCI B, 17(4), 1999, pp. 1884-1890
Defect formation near GaN surfaces and interfaces
Authors: Brillson, LJ Levin, TM Jessen, GH Young, AP Tu, C Naoi, Y Ponce, FA Yang, Y Lapeyre, GJ MacKenzie, JD Abernathy, CR
Citation: Lj. Brillson et al., Defect formation near GaN surfaces and interfaces, PHYSICA B, 274, 1999, pp. 70-74
Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy
Authors: Young, AP Schafer, J Brillson, LJ Yang, Y Xu, SH Cruguel, H Lapeyre, GJ Johnson, MAL Schetzina, JF
Citation: Ap. Young et al., Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy, J ELEC MAT, 28(3), 1999, pp. 308-313
High-resolution photoemission study of acetylene adsorption and reaction with the Si(100)-2x1 surface
Authors: Xu, SH Yang, Y Keeffe, M Lapeyre, GJ Rotenberg, E
Citation: Sh. Xu et al., High-resolution photoemission study of acetylene adsorption and reaction with the Si(100)-2x1 surface, PHYS REV B, 60(16), 1999, pp. 11586-11592
Risultati: 1-7 |