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Citation: Ka. Jones et al., Annealing ion implanted SiC with an AlN cap, MAT SCI E B, 61-2, 1999, pp. 281-286

Authors: Talyansky, V Choopun, S Downes, MJ Sharma, RP Venkatesan, T Li, YX Salamanca-Riba, LG Wood, MC Lareau, RT Jones, KA

Citation: V. Talyansky et al., Pulsed laser deposition of titanium nitride films on sapphire, J MATER RES, 14(8), 1999, pp. 3298-3302

Authors: Taylor, PJ Jesser, WA Martinka, M Singley, KM Dinan, JH Lareau, RT Wood, MC Clark, WW

Citation: Pj. Taylor et al., Reduced carbon contaminant, low-temperature silicon substrate preparation for "defect-free" homoepitaxy, J VAC SCI A, 17(4), 1999, pp. 1153-1159

Authors: Shen, H Pamulapati, J Taysing, M Wood, MC Lareau, RT Ervin, MH Mackenzie, JD Abernathy, CR Pearton, SJ Ren, F Zavada, JM

Citation: H. Shen et al., 1.55 mu m Er-doped GaN LED, SOL ST ELEC, 43(7), 1999, pp. 1231-1234