Authors: Masri, P Laridjani, MR Breton, O Averous, M

Citation: P. Masri et al., Evaluation of SiC as a substrate material for nitride materials heteroepitaxy, MAT SCI E B, 82(1-3), 2001, pp. 53-55

Authors: Masri, P Mortet, V Laridjani, MR Averous, M

Citation: P. Masri et al., Physics of epitaxy and c-BN films optimized growth, COMP MAT SC, 17(2-4), 2000, pp. 520-524

Authors: Masri, P Laridjani, MR Wohner, T Pezoldt, J Averous, M

Citation: P. Masri et al., Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth, COMP MAT SC, 17(2-4), 2000, pp. 544-550

Authors: Masri, P Moreaud, N Laridjani, MR Calas, J Averous, M Chaix, G Dollet, A Berjoan, R Dupuy, C

Citation: P. Masri et al., The physics of heteroepitaxy of 3C-SiC on Si: role of Ge in the optimization of the 3C-SiC/Si heterointerface, MAT SCI E B, 61-2, 1999, pp. 535-538