Authors: Ghaffour, K Lauer, V Souifi, A Guillot, G Raynaud, C Ortolland, S Iocatelli, ML Chante, JP

Citation: K. Ghaffour et al., Characterisation of deep level trap centres in 6H-SiC p-n junction diodes, MAT SCI E B, 66(1-3), 1999, pp. 106-110

Authors: Lauer, V Bremond, G Souifi, A Guillot, G Chourou, K Anikin, M Madar, R Clerjaud, B Naud, C

Citation: V. Lauer et al., Electrical and optical characterisation of vanadium in 4H and 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 248-252

Authors: Hugonnard-Bruyere, E Lauer, V Guillot, G Jaussaud, C

Citation: E. Hugonnard-bruyere et al., Deep level defects in H+ implanted 6H-SiC epilayers and in silicon carbideon insulator structures, MAT SCI E B, 61-2, 1999, pp. 382-388