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Results: 1-25 | 26-28 |
Results: 26-28/28
Step structure of arsenic-terminated vicinal Ge (100)
Authors: Gan, S Li, L Begarney, MJ Law, D Han, BK Hicks, RF
Citation: S. Gan et al., Step structure of arsenic-terminated vicinal Ge (100), J APPL PHYS, 85(3), 1999, pp. 2004-2006
A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy
Authors: Li, L Han, BK Law, D Li, CH Fu, Q Hicks, RF
Citation: L. Li et al., A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy, APPL PHYS L, 75(5), 1999, pp. 683-685
Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy
Authors: Li, L Han, BK Law, D Begarney, M Hicks, RF
Citation: L. Li et al., Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 28-33
Risultati: 1-25 | 26-28 |