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Results: 1-25 | 26-50 | 51-66
Results: 1-25/66
AlGaAs/InGaAs pseudomorphic high electron mobility transistor using Pd/Ge ohmic contact
Authors: Lee, JL Kim, YT Oh, JW Lee, BT
Citation: Jl. Lee et al., AlGaAs/InGaAs pseudomorphic high electron mobility transistor using Pd/Ge ohmic contact, JPN J A P 1, 40(3A), 2001, pp. 1188-1193
Interactive best-compromise approach for operation dispatch of cogeneration systems
Authors: Tsay, MT Lin, WM Lee, JL
Citation: Mt. Tsay et al., Interactive best-compromise approach for operation dispatch of cogeneration systems, IEE P-GEN T, 148(4), 2001, pp. 326-332
Esophageal leiomyoma: Radiologic findings in 12 patients
Authors: Yang, PS Lee, KS Lee, JL Kim, TS Choo, IW Shim, YM Kim, K Kim, Y
Citation: Ps. Yang et al., Esophageal leiomyoma: Radiologic findings in 12 patients, KOREAN J RA, 2(3), 2001, pp. 132-137
Room Temperature Ohmic contact on n-type GaN using plasma treatment
Authors: Jang, HW Kim, JK Jeon, CM Lee, JL
Citation: Hw. Jang et al., Room Temperature Ohmic contact on n-type GaN using plasma treatment, MRS I J N S, 6(8), 2001, pp. 1-7
High-temperature structural behavior of Ni/Au contact on GaN (0001)
Authors: Kim, CC Kim, JK Lee, JL Je, JH Yi, MS Noh, DY Hwu, Y Ruterana, P
Citation: Cc. Kim et al., High-temperature structural behavior of Ni/Au contact on GaN (0001), MRS I J N S, 6(4), 2001, pp. 1-7
Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy
Authors: Choi, KJ Lee, JL
Citation: Kj. Choi et Jl. Lee, Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy, J VAC SCI B, 19(3), 2001, pp. 615-621
Near perfect heteroepitaxy of diamond islands on Si(III)
Authors: Ryu, HJ Lee, JL Je, JH
Citation: Hj. Ryu et al., Near perfect heteroepitaxy of diamond islands on Si(III), CHEM VAPOR, 7(1), 2001, pp. 22
The effects of Au overlayer on the thermal stability of Pt ohmic contact on p-type GaN
Authors: Kim, JK Cho, YH Kwak, JS Nam, OH Lee, J Park, Y Kim, T Kim, JW Lee, JL
Citation: Jk. Kim et al., The effects of Au overlayer on the thermal stability of Pt ohmic contact on p-type GaN, J KOR PHYS, 39(1), 2001, pp. 23-27
Effects of hot-electron stress on electrical performances in AlGaAs/InGaAspseudomorphic high electron transistors
Authors: Choi, KJ Lee, JL
Citation: Kj. Choi et Jl. Lee, Effects of hot-electron stress on electrical performances in AlGaAs/InGaAspseudomorphic high electron transistors, J ELEC MAT, 30(7), 2001, pp. 885-890
Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN
Authors: Kim, JK Kim, KJ Kim, B Kim, JN Kwak, JS Park, YJ Lee, JL
Citation: Jk. Kim et al., Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN, J ELEC MAT, 30(3), 2001, pp. 129-133
Effects of surface treatments on the electrical and the microstructural changes of Pd contact an p-type GaN
Authors: Kim, JK Kim, CC Cho, TS Je, JH Kwak, JS Park, YJ Lee, JL
Citation: Jk. Kim et al., Effects of surface treatments on the electrical and the microstructural changes of Pd contact an p-type GaN, J ELEC MAT, 30(3), 2001, pp. 170-174
Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN
Authors: Kim, JK Je, JH Lee, JW Park, YJ Kim, T Jung, IO Lee, BT Lee, JL
Citation: Jk. Kim et al., Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN, J ELEC MAT, 30(2), 2001, pp. L8-L12
Reactive ion etching of vertical GaN mesas by the addition of CH4 to BCl3/H-2/Ar inductively coupled plasma
Authors: Lee, BY Jung, SY Lee, JL Park, YJ Paek, MC Cho, KI
Citation: By. Lee et al., Reactive ion etching of vertical GaN mesas by the addition of CH4 to BCl3/H-2/Ar inductively coupled plasma, SEMIC SCI T, 16(6), 2001, pp. 471-473
Optimal contracts decision of industrial customers
Authors: Tsay, MT Lin, WM Lee, JL
Citation: Mt. Tsay et al., Optimal contracts decision of industrial customers, INT J ELEC, 23(8), 2001, pp. 795-803
Application of evolutionary programming for economic dispatch of cogeneration systems under emission constraints
Authors: Tsay, MT Lin, WM Lee, JL
Citation: Mt. Tsay et al., Application of evolutionary programming for economic dispatch of cogeneration systems under emission constraints, INT J ELEC, 23(8), 2001, pp. 805-812
Interpretation of transconductance dispersion in GaAs MESFET using deep level transient spectroscopy
Authors: Choi, KJ Lee, JL
Citation: Kj. Choi et Jl. Lee, Interpretation of transconductance dispersion in GaAs MESFET using deep level transient spectroscopy, IEEE DEVICE, 48(2), 2001, pp. 190-195
Integrator and differentiator with time constant multiplication using current feedback amplifier
Authors: Lee, JL Liu, SI
Citation: Jl. Lee et Si. Liu, Integrator and differentiator with time constant multiplication using current feedback amplifier, ELECTR LETT, 37(6), 2001, pp. 331-333
Ohmic contact formation mechanism of Ni on n-type 4H-SiC
Authors: Han, SY Kim, KH Kim, JK Jang, HW Lee, KH Kim, NK Kim, ED Lee, JL
Citation: Sy. Han et al., Ohmic contact formation mechanism of Ni on n-type 4H-SiC, APPL PHYS L, 79(12), 2001, pp. 1816-1818
Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization
Authors: Jang, HW Kim, KH Kim, JK Hwang, SW Yang, JJ Lee, KJ Son, SJ Lee, JL
Citation: Hw. Jang et al., Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization, APPL PHYS L, 79(12), 2001, pp. 1822-1824
Positron annihilation study of Pd contacts on impurity-doped GaN
Authors: Lee, JL Kim, JK Weber, MH Lynn, KG
Citation: Jl. Lee et al., Positron annihilation study of Pd contacts on impurity-doped GaN, APPL PHYS L, 78(26), 2001, pp. 4142-4144
Catalytic role of Au in Ni/Au contact on GaN(0001)
Authors: Kim, CC Kim, JK Lee, JL Je, JH Yi, MS Noh, DY Hwu, Y Ruterana, P
Citation: Cc. Kim et al., Catalytic role of Au in Ni/Au contact on GaN(0001), APPL PHYS L, 78(24), 2001, pp. 3773-3775
Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl-2 inductively coupled plasma
Authors: Jang, HW Jeon, CM Kim, JK Lee, JL
Citation: Hw. Jang et al., Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl-2 inductively coupled plasma, APPL PHYS L, 78(14), 2001, pp. 2015-2017
The relationship between alloying elements and retained austenite in martensitic stainless steel welds
Authors: Wu, W Hwu, LY Lin, DY Lee, JL
Citation: W. Wu et al., The relationship between alloying elements and retained austenite in martensitic stainless steel welds, SCR MATER, 42(11), 2000, pp. 1071-1076
Transparent Pt ohmic contact on p-type GaN with low resistivity using (NH4)(2)S-x treatment
Authors: Lee, JL Kim, JK Lee, JW Park, YJ Kim, T
Citation: Jl. Lee et al., Transparent Pt ohmic contact on p-type GaN with low resistivity using (NH4)(2)S-x treatment, EL SOLID ST, 3(1), 2000, pp. 53-55
Analysis of activity duration using the Puget sound transportation panel
Authors: Lee, JL Niemeier, DA
Citation: Jl. Lee et Da. Niemeier, Analysis of activity duration using the Puget sound transportation panel, TRANSP R A, 34(8), 2000, pp. 607-624
Risultati: 1-25 | 26-50 | 51-66