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Results:
1-7
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Results: 7
Authors:
Leem, SJ
Kim, MH
Shin, J
Choi, Y
Jeong, J
Citation: Sj. Leem et al., The effects of in flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition, JPN J A P 2, 40(4B), 2001, pp. L371-L373
Authors:
Hong, YK
Kim, CS
Jung, HS
Hong, CH
Kim, MH
Leem, SJ
Cho, HK
Lee, JY
Citation: Yk. Hong et al., Structural properties of GaN grown by pendeo-epitaxy with in-doping, PHYS ST S-B, 228(1), 2001, pp. 235-238
Authors:
Kim, C
Jang, J
Shin, J
Choi, JW
Seo, JH
Kim, W
Park, J
Seo, JO
Leem, SJ
Seung, BH
Lee, KB
Park, YJ
Citation: C. Kim et al., Temperature-driven crystalline ordering and Ohmic contact formation of PdAu layers on p-type GaN - art. no. 113302, PHYS REV B, 6411(11), 2001, pp. 3302
Authors:
Yang, M
Cho, M
Kim, C
Yi, J
Jeon, J
Khym, S
Kim, M
Choi, Y
Leem, SJ
Lee, YH
Citation: M. Yang et al., A selective growth of III-nitride by MOCVD for a buried-ridge type structure, J CRYST GR, 226(1), 2001, pp. 73-78
Authors:
Kim, MH
Choi, Y
Yi, JY
Yang, M
Jeon, J
Khym, S
Leem, SJ
Citation: Mh. Kim et al., Reduction in crystallographic tilting of lateral epitaxial overgrown GaN by removal of oxide mask, APPL PHYS L, 79(11), 2001, pp. 1619-1621
Authors:
Kim, C
Yang, M
Yi, J
Kim, M
Song, H
Jeon, J
Choi, Y
Yoo, TK
Leem, SJ
Citation: C. Kim et al., Cathodoluminescence characteristics of large-scale in-rich InGaN grains and effect of low-energy electron-beam irradiation, J KOR PHYS, 37(6), 2000, pp. 846-849
Authors:
Kim, C
Yi, JY
Yang, M
Kim, MH
Jeon, J
Khym, S
Cho, MW
Choi, YH
Leem, SJ
Kim, ST
Citation: C. Kim et al., Inversion domains triggering recovery of luminescence uniformity in epitaxially lateral overgrown thick GaN film, APPL PHYS L, 77(26), 2000, pp. 4319-4321
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