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Results: 1-8 |
Results: 8
High density plasma via hole etching in SiC
Authors: Cho, H Lee, KP Leerungnawarat, P Chu, SNG Ren, F Pearton, SJ Zetterling, CM
Citation: H. Cho et al., High density plasma via hole etching in SiC, J VAC SCI A, 19(4), 2001, pp. 1878-1881
Comparison of F-2 plasma chemistries for deep etching of SiC
Authors: Leerungnawarat, P Lee, KP Pearton, SJ Ren, F Chu, SNG
Citation: P. Leerungnawarat et al., Comparison of F-2 plasma chemistries for deep etching of SiC, J ELEC MAT, 30(3), 2001, pp. 202-206
Selective dry etching of InGaP over GaAs in inductively coupled plasmas
Authors: Leerungnawarat, P Cho, H Hays, DC Lee, JW Devre, MW Reelfs, BH Johnson, D Sasserath, JN Abernathy, CR Pearton, SJ
Citation: P. Leerungnawarat et al., Selective dry etching of InGaP over GaAs in inductively coupled plasmas, J ELEC MAT, 29(5), 2000, pp. 586-590
Effect of UV light irradiation on SiC dry etch rates
Authors: Leerungnawarat, P Cho, H Pearton, SJ Zetterling, CM Ostling, M
Citation: P. Leerungnawarat et al., Effect of UV light irradiation on SiC dry etch rates, J ELEC MAT, 29(3), 2000, pp. 342-346
Surface morphology and removal rates for dry- and wet-etched novel resonator materials Part I. La3Ga5.5Ta0.5O14
Authors: Hays, DC Leerungnawarat, P Pearton, SJ Archibald, G Smythe, RC
Citation: Dc. Hays et al., Surface morphology and removal rates for dry- and wet-etched novel resonator materials Part I. La3Ga5.5Ta0.5O14, APPL SURF S, 165(2-3), 2000, pp. 127-134
Surface morphology and removal rates for dry- and wet-etched novel resonator materials - Part II. La3Ga5.5Nb0.5O14
Authors: Hays, DC Leerungnawarat, P Pearton, SJ Archibald, G Smythe, RC
Citation: Dc. Hays et al., Surface morphology and removal rates for dry- and wet-etched novel resonator materials - Part II. La3Ga5.5Nb0.5O14, APPL SURF S, 165(2-3), 2000, pp. 135-140
Ultradeep, low-damage dry etching of SiC
Authors: Cho, H Leerungnawarat, P Hays, DC Pearton, SJ Chu, SNG Strong, RM Zetterling, CM Ostling, M Ren, F
Citation: H. Cho et al., Ultradeep, low-damage dry etching of SiC, APPL PHYS L, 76(6), 2000, pp. 739-741
Via-hole etching for SiC
Authors: Leerungnawarat, P Hays, DC Cho, H Pearton, SJ Strong, RM Zetterling, CM Ostling, M
Citation: P. Leerungnawarat et al., Via-hole etching for SiC, J VAC SCI B, 17(5), 1999, pp. 2050-2054
Risultati: 1-8 |