Authors: Milne, WI Teo, KBK Chhowalla, M Amaratunga, GAJ Yuan, J Robertson, J Legagneux, P Pirio, G Pribat, D Bouzehouane, K Bruenger, W Trautmann, C

Citation: Wi. Milne et al., Carbon films for use as the electron source in a parallel e-beam lithography system, NEW DIAM FR, 11(4), 2001, pp. 235-247

Authors: Duboz, JY Dua, L Glastre, G Legagneux, P Massies, J Semond, F Grandjean, N

Citation: Jy. Duboz et al., Dielectric microcavity in GaN/Si, PHYS ST S-A, 183(1), 2001, pp. 35-39

Authors: Teo, KBK Chhowalla, M Amaratunga, GAJ Milne, WI Hasko, DG Pirio, G Legagneux, P Wyczisk, F Pribat, D

Citation: Kbk. Teo et al., Uniform patterned growth of carbon nanotubes without surface carbon, APPL PHYS L, 79(10), 2001, pp. 1534-1536

Authors: Mariucci, L Carluccio, R Pecora, A Foglietti, V Fortunato, G Legagneux, P Pribat, D Della Sala, D Stoemenos, J

Citation: L. Mariucci et al., Lateral growth control in excimer laser crystallized polysilicon, THIN SOL FI, 337(1-2), 1999, pp. 137-142

Authors: Fogarassy, E de Unamuno, S Legagneux, P Plais, F Pribat, D Godard, B Stehle, M

Citation: E. Fogarassy et al., Surface melt dynamics and super lateral growth regime in long pulse duration excimer laser crystallization of amorphous Si films, THIN SOL FI, 337(1-2), 1999, pp. 143-147