Authors: Cheng, ZY Currie, MT Leitz, CW Taraschi, G Fitzgerald, EA Hoyt, JL Antoniadas, DA

Citation: Zy. Cheng et al., Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates, IEEE ELEC D, 22(7), 2001, pp. 321-323

Authors: Leitz, CW Currie, MT Kim, AY Lai, J Robbins, E Fitzgerald, EA Bulsara, MT

Citation: Cw. Leitz et al., Dislocation glide and blocking kinetics in compositionally graded SiGe/Si, J APPL PHYS, 90(6), 2001, pp. 2730-2736

Authors: Lee, ML Leitz, CW Cheng, Z Pitera, AJ Langdo, T Currie, MT Taraschi, G Fitzgerald, EA Antoniadis, DA

Citation: Ml. Lee et al., Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si1-xGex/Si virtual substrates, APPL PHYS L, 79(20), 2001, pp. 3344-3346

Authors: Langdo, TA Leitz, CW Currie, MT Fitzgerald, EA Lochtefeld, A Antoniadis, DA

Citation: Ta. Langdo et al., High quality Ge on Si by epitaxial necking, APPL PHYS L, 76(25), 2000, pp. 3700-3702

Authors: Fitzgerald, EA Currie, MT Samavedam, SB Langdo, TA Taraschi, G Yang, V Leitz, CW Bulsara, MT

Citation: Ea. Fitzgerald et al., Dislocations in relaxed SiGe/Si heterostructures, PHYS ST S-A, 171(1), 1999, pp. 227-238