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Results:
1-8
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Results: 8
Authors:
Shaposhnikov, VL
Ivanenko, LI
Migas, DB
Lenssen, D
Carius, R
Mantl, S
Borisenko, VE
Citation: Vl. Shaposhnikov et al., Optical properties of semiconducting RU2Si3, OPT MATER, 17(1-2), 2001, pp. 339-341
Authors:
Oyoshi, K
Lenssen, D
Carius, R
Mantl, S
Citation: K. Oyoshi et al., Study of structure and optical properties of beta-FeSi2 precipitates formed by ion-implantation of Fe+ in Si(100) and effects of co-implantation of Fe+ and Si+ in amorphous SiO2, THIN SOL FI, 381(2), 2001, pp. 194-201
Authors:
Oyoshi, K
Lenssen, D
Carius, R
Mantl, S
Citation: K. Oyoshi et al., Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion implantation and their structural and optical properties, THIN SOL FI, 381(2), 2001, pp. 202-208
Authors:
Lenssen, D
Carius, R
Mantl, S
Birdwell, AG
Citation: D. Lenssen et al., Electrical and optical characterization of semiconducting Ru2Si3 films andsingle crystals, J APPL PHYS, 90(7), 2001, pp. 3347-3352
Authors:
Lenssen, D
Carius, R
Mesters, S
Guggi, D
Bay, HL
Mantl, S
Citation: D. Lenssen et al., Structural, electrical and optical characterization of semiconducting Ru2Si3, MICROEL ENG, 50(1-4), 2000, pp. 243-248
Authors:
Lenssen, D
Lenk, S
Bay, HL
Mantl, S
Citation: D. Lenssen et al., Molecular beam epitaxy of Ru2Si3 on silicon, THIN SOL FI, 371(1-2), 2000, pp. 66-71
Authors:
Lenssen, D
Guggi, D
Bay, HL
Mantl, S
Citation: D. Lenssen et al., Epitaxial orientation of MBE grown Ru2Si3 films on Si(111) and Si(001), THIN SOL FI, 368(1), 2000, pp. 15-21
Authors:
Lenssen, D
Bay, HL
Mesters, S
Dieker, C
Guggi, D
Carius, R
Mantl, S
Citation: D. Lenssen et al., Growth and structural characterization of semiconducting Ru2Si3, J LUMINESC, 80(1-4), 1998, pp. 461-465
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