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Results:
1-8
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Results: 8
Authors:
Martensson, E
Gafvert, U
Lindefelt, U
Citation: E. Martensson et al., Direct current conduction in SiC powders, J APPL PHYS, 90(6), 2001, pp. 2862-2869
Authors:
Persson, C
Lindefelt, U
Sernelius, BE
Citation: C. Persson et al., Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H-SiC and Si, SOL ST ELEC, 44(3), 2000, pp. 471-476
Authors:
Lindefelt, U
Citation: U. Lindefelt, A model for doping-induced band gap narrowing in 3C-, 4H-, and 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 225-228
Authors:
Tornblad, O
Ostling, M
Lindefelt, U
Breitholtz, B
Citation: O. Tornblad et al., Effect of anisotropic material properties on the forward voltage drop in 6H- and 4H-SiC power diode structures, SEMIC SCI T, 14(2), 1999, pp. 125-129
Authors:
Persson, C
Lindefelt, U
Sernelius, BE
Citation: C. Persson et al., Doping-induced effects on the band structure in n-type 3C-, 2H-, 4H-, 6H-SiC, and Si, PHYS REV B, 60(24), 1999, pp. 16479-16493
Authors:
Persson, C
Lindefelt, U
Citation: C. Persson et U. Lindefelt, Dependence of energy gaps and effective masses on atomic positions in hexagonal SiC, J APPL PHYS, 86(9), 1999, pp. 5036-5039
Authors:
Persson, C
Lindefelt, U
Sernelius, BE
Citation: C. Persson et al., Band gap narrowing in n-type and p-type 3C-, 2H-, 4H-, 6H-SiC, and Si, J APPL PHYS, 86(8), 1999, pp. 4419-4427
Authors:
Ivanov, IG
Lindefelt, U
Henry, A
Kordina, O
Hallin, C
Aroyo, M
Egilsson, T
Janzen, E
Citation: Ig. Ivanov et al., Phonon replicas at the M point in 4H-SiC: A theoretical and experimental study, PHYS REV B, 58(20), 1998, pp. 13634-13647
Risultati:
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