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Properties of a monolithic electroacoustic device geometry using GaAs resonant tunnelling structures
Authors:
Hutchinson, AB
Talyanskii, VI
Harrell, RH
Pepper, M
Linfield, EH
Citation: Ab. Hutchinson et al., Properties of a monolithic electroacoustic device geometry using GaAs resonant tunnelling structures, JPN J A P 1, 40(4B), 2001, pp. 2787-2791
Authors:
Simmons, MY
Hamilton, AR
Pepper, M
Linfield, EH
Rose, PD
Ritchie, DA
Citation: My. Simmons et al., Metallic behaviour and localisation in 2D GaAs hole systems, PHYSICA E, 11(2-3), 2001, pp. 161-166
Authors:
Hamilton, AR
Simmons, MY
Pepper, M
Linfield, EH
Ritchie, DA
Citation: Ar. Hamilton et al., Localisation and the metal-insulator transition in two dimensions, PHYSICA B, 296(1-3), 2001, pp. 21-31
Authors:
Taylor, RP
Micolich, AP
Newbury, R
Fromhold, TM
Ehlert, A
Davies, AG
Macks, LD
Tench, CR
Birds, JP
Linke, H
Tribe, WR
Linfield, EH
Ritchie, DA
Citation: Rp. Taylor et al., Semiconductor billiards - a controlled environment to study fractals, PHYS SCR, T90, 2001, pp. 41-49
Authors:
Pokrovskii, VY
Savchenko, AK
Tribe, WR
Linfield, EH
Citation: Vy. Pokrovskii et al., Modulation origin of 1/f noise in two-dimensional hopping - art. no. 201318, PHYS REV B, 6420(20), 2001, pp. 1318
Authors:
Corchia, A
McLaughlin, R
Johnston, MB
Whittaker, DM
Arnone, DD
Linfield, EH
Davies, AG
Pepper, M
Citation: A. Corchia et al., Effects of magnetic field and optical fluence on terahertz emission in gallium arsenide - art. no. 205204, PHYS REV B, 6420(20), 2001, pp. 5204
Authors:
Sellwood, AT
Smith, CG
Linfield, EH
Simmons, MY
Ritchie, DA
Citation: At. Sellwood et al., Scanning noninvasive voltage probe operating at 4.2 K, REV SCI INS, 72(4), 2001, pp. 2100-2105
Authors:
Hamilton, AR
Simmons, MY
Pepper, M
Linfield, EH
Ritchie, DA
Citation: Ar. Hamilton et al., Metallic behavior in dilute two-dimensional hole systems - art. no. 126802, PHYS REV L, 8712(12), 2001, pp. 6802
Authors:
Tkachenko, OA
Tkachenko, VA
Baksheyev, DG
Pyshkin, KS
Harrell, RH
Linfield, EH
Ritchie, DA
Ford, CJB
Citation: Oa. Tkachenko et al., Electrostatic potential and quantum transport in a one-dimensional channelof an induced two-dimensional electron gas, J APPL PHYS, 89(9), 2001, pp. 4993-5000
Authors:
Corchia, A
Ciesla, CM
Arnone, DD
Linfield, EH
Simmons, MY
Pepper, M
Citation: A. Corchia et al., Crystallographic orientation dependence of bulk optical rectification, J MOD OPT, 47(11), 2000, pp. 1837-1845
Authors:
Safonov, SS
Savchenko, AK
Tribe, WR
Linfield, EH
Citation: Ss. Safonov et al., Random switchings and hysteresis in I-V characteristics of short-gate GaAsstructures, PHYS ST S-B, 218(1), 2000, pp. 145-150
Authors:
Pyshkin, KS
Ford, CJB
Harrell, RH
Pepper, M
Linfield, EH
Ritchie, DA
Citation: Ks. Pyshkin et al., Spin splitting of one-dimensional subbands in high quality quantum wires at zero magnetic field, PHYS REV B, 62(23), 2000, pp. 15842-15850
Authors:
Hutchinson, AB
Talyanskii, VI
Pepper, M
Gumbs, G
Aizin, GR
Ritchie, DA
Linfield, EH
Citation: Ab. Hutchinson et al., Nonlinear interaction between surface acoustic waves and electrons in GaAsresonant-tunneling structures, PHYS REV B, 62(11), 2000, pp. 6948-6951
Authors:
Simmons, MY
Hamilton, AR
Pepper, M
Linfield, EH
Rose, PD
Ritchie, DA
Citation: My. Simmons et al., Weak localization, hole-hole interactions, and the "metal"-insulator transition in two dimensions, PHYS REV L, 84(11), 2000, pp. 2489-2492
Authors:
Shapira, S
Linfield, EH
Lambert, CJ
Seviour, R
Volkov, AF
Zaitsev, AV
Citation: S. Shapira et al., Anomalous behavior of superconducting-normal mesoscopic structures near T-c, PHYS REV L, 84(1), 2000, pp. 159-162
Authors:
Huggard, PG
Cluff, JA
Moore, GP
Shaw, CJ
Andrews, SR
Keiding, SR
Linfield, EH
Ritchie, DA
Citation: Pg. Huggard et al., Drude conductivity of highly doped GaAs at terahertz frequencies, J APPL PHYS, 87(5), 2000, pp. 2382-2385
Authors:
Simmons, MY
Hamilton, AR
Pepper, M
Linfield, EH
Rose, PD
Ritchie, DA
Citation: My. Simmons et al., Is there a metallic state in two dimensions?, AUST J PHYS, 53(4), 2000, pp. 513-522
Authors:
McLaughlin, R
Corchia, A
Johnston, MB
Chen, Q
Ciesla, CM
Arnone, DD
Jones, GAC
Linfield, EH
Davies, AG
Pepper, M
Citation: R. Mclaughlin et al., Enhanced coherent terahertz emission from indium arsenide in the presence of a magnetic field, APPL PHYS L, 76(15), 2000, pp. 2038-2040
Authors:
Gardelis, S
Smith, CG
Barnes, CHW
Linfield, EH
Ritchie, DA
Citation: S. Gardelis et al., Spin-valve effects in a semiconductor field-effect transistor: A spintronic device, PHYS REV B, 60(11), 1999, pp. 7764-7767
Authors:
Kainth, DS
Richards, D
Bhatti, AS
Hughes, HP
Simmons, MY
Linfield, EH
Ritchie, DA
Citation: Ds. Kainth et al., Angle-resolved Raman spectroscopy of the collective modes in an electron bilayer, PHYS REV B, 59(3), 1999, pp. 2095-2101
Authors:
Hamilton, AR
Simmons, MY
Pepper, M
Linfield, EH
Rose, PD
Ritchie, DA
Citation: Ar. Hamilton et al., Reentrant insulator-metal-insulator transition at B=0 in a two-dimensionalhole gas, PHYS REV L, 82(7), 1999, pp. 1542-1545
Ground state of a two-dimensional coupled electron-hole gas in InAs/GaSb narrow gap heterostructures
Authors:
Marlow, TP
Cooper, LJ
Arnone, DD
Patel, NK
Whittaker, DM
Linfield, EH
Ritchie, DA
Pepper, M
Citation: Tp. Marlow et al., Ground state of a two-dimensional coupled electron-hole gas in InAs/GaSb narrow gap heterostructures, PHYS REV L, 82(11), 1999, pp. 2362-2365
Authors:
Leadbeater, ML
Burke, TM
Linfield, EH
Patel, NK
Ritchie, DA
Pepper, M
Citation: Ml. Leadbeater et al., Low-dimensional devices fabricated by molecular beam epitaxy regrowth overpatterned delta-doped backgates, MICROELEC J, 30(4-5), 1999, pp. 315-318
Authors:
Sazio, PJA
Vijendran, S
Yu, W
Beere, HE
Jones, GAC
Linfield, EH
Ritchie, DA
Citation: Pja. Sazio et al., Focused ion molecular-beam epitaxy - a novel approach to 3D device fabrication using simultaneous p- and n-type doping, J CRYST GR, 202, 1999, pp. 12-16
Authors:
Burke, TM
Leadbeater, ML
Linfield, EH
Patel, NK
Ritchie, DA
Pepper, M
Citation: Tm. Burke et al., Ultrashort FETs formed by GaAs AlGaAs MBE regrowth on a patterned delta doped GaAs layer, J CRYST GR, 202, 1999, pp. 761-764