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Results: 1-3 |
Results: 3
Epitaxial growth of SiC in a new multi-wafer VPE reactor
Authors: Karlsson, S Nordell, N Spadafora, F Linnarsson, M
Citation: S. Karlsson et al., Epitaxial growth of SiC in a new multi-wafer VPE reactor, MAT SCI E B, 61-2, 1999, pp. 143-146
Hall effect investigations of 4H-SiC epitaxial layers grown on semi-insulating and conducting substrates
Authors: Schoner, A Karlsson, S Schmitt, T Nordell, N Linnarsson, M
Citation: A. Schoner et al., Hall effect investigations of 4H-SiC epitaxial layers grown on semi-insulating and conducting substrates, MAT SCI E B, 61-2, 1999, pp. 389-394
Channeling implantations of Al+ into 6H silicon carbide
Authors: Morvan, E Godignon, P Vellvehi, M Hallen, A Linnarsson, M Kuznetsov, AY
Citation: E. Morvan et al., Channeling implantations of Al+ into 6H silicon carbide, APPL PHYS L, 74(26), 1999, pp. 3990-3992
Risultati: 1-3 |