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Results: 1-11 |
Results: 11
Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide - art. no. 195202
Authors: Janson, MS Hallen, A Linnarsson, MK Svensson, BG
Citation: Ms. Janson et al., Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide - art. no. 195202, PHYS REV B, 6419(19), 2001, pp. 5202
Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor
Authors: Zhang, J Ellison, A Henry, A Linnarsson, MK Janzen, E
Citation: J. Zhang et al., Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor, J CRYST GR, 226(2-3), 2001, pp. 267-276
Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
Authors: Linnarsson, MK Janson, MS Zimmermann, U Svensson, BG Persson, POA Hultman, L Wong-Leung, J Karlsson, S Schoner, A Bleichner, H Olsson, E
Citation: Mk. Linnarsson et al., Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material, APPL PHYS L, 79(13), 2001, pp. 2016-2018
Electric-field-assisted migration and accumulation of hydrogen in silicon carbide
Authors: Janson, MS Hallen, A Linnarsson, MK Svensson, BG Nordell, N Karlsson, S
Citation: Ms. Janson et al., Electric-field-assisted migration and accumulation of hydrogen in silicon carbide, PHYS REV B, 61(11), 2000, pp. 7195-7198
Transient enhanced diffusion of implanted boron in 4H-silicon carbide
Authors: Janson, MS Linnarsson, MK Hallen, A Svensson, BG Nordell, N Bleichner, H
Citation: Ms. Janson et al., Transient enhanced diffusion of implanted boron in 4H-silicon carbide, APPL PHYS L, 76(11), 2000, pp. 1434-1436
Nitrogen impurity incorporation behavior in a chimney HTCVD process: pressure and temperature dependence
Authors: Zhang, J Ellison, A Henry, A Linnarsson, MK Janzen, E
Citation: J. Zhang et al., Nitrogen impurity incorporation behavior in a chimney HTCVD process: pressure and temperature dependence, MAT SCI E B, 61-2, 1999, pp. 151-154
Diffusion of light elements in 4H-and 6H-SiC
Authors: Linnarsson, MK Janson, MS Karlsson, S Schoner, A Nordell, N Svensson, BG
Citation: Mk. Linnarsson et al., Diffusion of light elements in 4H-and 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 275-280
Cascade mixing in AlxGa1-xAs/GaAs during sputter profiling by noble-gas ions
Authors: Linnarsson, MK Svensson, BG
Citation: Mk. Linnarsson et Bg. Svensson, Cascade mixing in AlxGa1-xAs/GaAs during sputter profiling by noble-gas ions, PHYS REV B, 60(20), 1999, pp. 14302-14310
Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen
Authors: Aberg, D Linnarsson, MK Svensson, BG Hallberg, T Lindstrom, JL
Citation: D. Aberg et al., Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen, J APPL PHYS, 85(12), 1999, pp. 8054-8059
Mobility passivating effect and thermal stability of hydrogen in silicon carbide
Authors: Achtziger, N Hulsen, C Witthuhn, W Linnarsson, MK Janson, M Svensson, BG
Citation: N. Achtziger et al., Mobility passivating effect and thermal stability of hydrogen in silicon carbide, PHYS ST S-B, 210(2), 1998, pp. 395-399
Ultra-shallow thermal donor formation in oxygen-containing ambient
Authors: Aberg, D Hallberg, T Svensson, BG Lindstrom, JL Linnarsson, MK
Citation: D. Aberg et al., Ultra-shallow thermal donor formation in oxygen-containing ambient, PHYS ST S-B, 210(2), 1998, pp. 527-532
Risultati: 1-11 |