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Results: 1-10 |
Results: 10
Optical and electrical properties of Be doped GaN bulk crystals
Authors: Suski, T Litwin-Staszewska, E Perlin, P Wisniewski, P Teisseyre, H Grzegory, I Bockowski, M Porowski, S Saarinen, K Nissila, J
Citation: T. Suski et al., Optical and electrical properties of Be doped GaN bulk crystals, J CRYST GR, 230(3-4), 2001, pp. 368-371
Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing
Authors: Litwin-Staszewska, E Suski, T Piotrzkowski, R Grzegory, I Bockowski, M Robert, JL Konczewicz, L Wasik, D Kaminska, E Cote, D Clerjaud, B
Citation: E. Litwin-staszewska et al., Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing, J APPL PHYS, 89(12), 2001, pp. 7960-7965
Manganin sensors as low temperature pressure gauges
Authors: Dmowski, LH Przybytek, J Litwin-Staszewska, E
Citation: Lh. Dmowski et al., Manganin sensors as low temperature pressure gauges, HIGH PR RES, 19(1-6), 2000, pp. 743-747
Pressure sensors based on AlGaAs doped with Te and Sn
Authors: Litwin-Staszewska, E Trzeciakowski, W Dmowski, L Stankevic, V Zytkiewicz, Z
Citation: E. Litwin-staszewska et al., Pressure sensors based on AlGaAs doped with Te and Sn, HIGH PR RES, 19(1-6), 2000, pp. 749-755
The variation of the pressure coefficient of manganin sensors at low temperatures
Authors: Dmowski, LH Litwin-Staszewska, E
Citation: Lh. Dmowski et E. Litwin-staszewska, The variation of the pressure coefficient of manganin sensors at low temperatures, MEAS SCI T, 10(5), 1999, pp. 343-347
On the applicability of InGaP : Si and AlGaAs : Sn piezoresistive pressuresensors in the 2.5 GPa range
Authors: Litwin-Staszewska, E Trzeciakowski, W Dmowski, L Piotrzkowski, R Gonzalez, L Zytkiewicz, Z
Citation: E. Litwin-staszewska et al., On the applicability of InGaP : Si and AlGaAs : Sn piezoresistive pressuresensors in the 2.5 GPa range, SENS ACTU-A, 78(2-3), 1999, pp. 130-137
New type of persistent photoconductivity related to DX-center: the study of interband PPC in Si-doped AlGaAs
Authors: Piotrzkowski, R Litwin-Staszewska, E Bosc, F Sicart, J Robert, JL
Citation: R. Piotrzkowski et al., New type of persistent photoconductivity related to DX-center: the study of interband PPC in Si-doped AlGaAs, PHYSICA B, 274, 1999, pp. 792-795
Infrared reflectivity and transport investigations of GaN single crystals and homoepitaxial layers
Authors: Frayssinet, E Knap, W Robert, JL Prystawko, P Leszczynski, M Suski, T Wisniewski, P Litwin-Staszewska, E Porowski, S Beaumont, B Gibart, P
Citation: E. Frayssinet et al., Infrared reflectivity and transport investigations of GaN single crystals and homoepitaxial layers, PHYS ST S-B, 216(1), 1999, pp. 91-94
Electrical properties of GaN bulk single crystals doped with Mg
Authors: Litwin-Staszewska, E Suski, T Grzegory, I Porowski, S Perlin, P Robert, JL Contreras, S Wasik, D Witowski, A Cote, D Clerjaud, B
Citation: E. Litwin-staszewska et al., Electrical properties of GaN bulk single crystals doped with Mg, PHYS ST S-B, 216(1), 1999, pp. 567-570
Electrical properties of InGaP : Si and AlGaAs : Sn epitaxial layers
Authors: Litwin-Staszewska, E Trzeciakowski, W Piotrzkowski, R Gonzalez, L Zytkiewicz, Z
Citation: E. Litwin-staszewska et al., Electrical properties of InGaP : Si and AlGaAs : Sn epitaxial layers, PHYS ST S-B, 211(1), 1999, pp. 565-570
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